한국정보디스플레이학회:학술대회논문집
- 2007.08a
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- Pages.459-462
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- 2007
Joule-heating induced crystallization (JIC) of amorphous silicon films
- Hong, Won-Eui (Department of Materials Science and Engineering, Hongik University) ;
- Lee, Joo-Yeol (EnSilTech Corporation) ;
- Kim, Bo-Kyung (Department of Materials Science and Engineering, Hongik University) ;
- Ro, Jae-Sang (Department of Materials Science and Engineering, Hongik University, EnSilTech Corporation)
- Published : 2007.08.27
Abstract
An electric field was applied to a conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced through a solid state transformation within the range of a millisecond. Uniformly distributed grains were obtained due to enormously high heating rate.