Efficiency enhancement of Organic Light Emitting Diodes by the Aluminum Oxynitride Buffer Layer

  • Park, Hyung-Jun (School of information and communication engineering, Sungkyunkwan University) ;
  • Jang, Kyung-Soo (School of information and communication engineering, Sungkyunkwan University) ;
  • Jung, Sung-Wook (School of information and communication engineering, Sungkyunkwan University) ;
  • Hwang, Sung-Hyun (School of information and communication engineering, Sungkyunkwan University) ;
  • Lee, Jeoung-In (School of information and communication engineering, Sungkyunkwan University) ;
  • Lee, Kwang-Soo (School of information and communication engineering, Sungkyunkwan University) ;
  • Park, Keun-Hee (Dept. of physics, Institute of Basic Science, and Brain 21 Physics Research Division, Sungkyunkwan University) ;
  • Nam, Eun-Kyoung (Dept. of physics, Institute of Basic Science, and Brain 21 Physics Research Division, Sungkyunkwan University) ;
  • Jung, Dong-geun (Dept. of physics, Institute of Basic Science, and Brain 21 Physics Research Division, Sungkyunkwan University) ;
  • Yi, Jun-Sin (School of information and communication engineering, Sungkyunkwan University)
  • Published : 2007.08.27

Abstract

In organic light emitting diodes (OLEDs), the electrons and holes need to be injected efficiently to obtain the best device performance. This means that a small injection barrier height at the ITO/organic interface is required. In this study, the surface of the ITO anode was treated with an Aluminum oxynitride (AlON).

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