The Effects of Hydrophobic Buffer Layer Without Losing Dielectric Property on Organic Transistors

  • Song, June-Yong (Department of Electronics and Computer Engineering, Hanyang University) ;
  • Jung, Jae-Il (Department of Electronics and Computer Engineering, Hanyang University) ;
  • Choi, Yoon-Seuk (Research Institute of Information Display, Hanyang University) ;
  • Kim, Hak-Rin (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Kim, Jae-Hoon (Department of Electronics and Computer Engineering, Hanyang University, Research Institute of Information Display, Hanyang University)
  • Published : 2007.08.27

Abstract

The buffer layer was spin-coated on the dielectric layer of OTFTs to introduce the hydrophobicity for enhancing the device performance. this functional layer contains the water-proof ingredient to reduce the surface energy and more importantly, does not harm the dielectric property of the dielectric layer. With the help of proposed hydrophobic layer, the transistor showed dramatic improvement at electrical performance which was almost 20 times higher mobility compared to the non-treated case. And on/off ratio was also guaranteed as $10^{5{\sim}6}$.

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