Low-Temperature Processable Polyimide Gate Insulator and Hybridization Approach for High Performance Pentacene Thin Film Transistor

  • Ahn, Taek (Information and Electronics Polymer Research Center Korea Research Institute of Chemical Technology) ;
  • Kim, Jin-Woo (Information and Electronics Polymer Research Center Korea Research Institute of Chemical Technology) ;
  • Yi, Mi-Hye (Information and Electronics Polymer Research Center Korea Research Institute of Chemical Technology)
  • Published : 2007.08.27

Abstract

We have synthesized a novel fully soluble and low-temperature processable polyimide gate insulator (KSPI) through one-step condensation polymerization. For the preparation of KSPI, 5- (2,5-dioxytetrahydrofuryl)-3-methly-3-cyclohexene- 1,2-dicarboxylic anhydride (DOCDA) and 4,4- diaminodiphenylmethane (MDA) were used as monomers and fully imidized KSPI was completely soluble in organic solvents like ${\gamma}-butyrolactone$ and 2-butoxyethanol, etc.

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