Pentacene Thin-Film Transistors with Polyimide/$SiO_2$ Dual Gate Dielectric

Relationships between field effect mobility and grain size on pentacene thin-film transistors with $polyimide/SiO_2$ gate dielectrics have been studied. 6 kinds of polyimide were used as surface treatment gate dielectric layer. Grain size of the pentacene thin film were between 5 and $30\;{\mu}m$ and depended on the polyimide. The field effect mobility were also depended on the polyimide and the those values were from 0.027 to $0.69\;cm^2/(Vs)$. The field effect mobility tends to increase with increasing the grain size. Precursor type polyimide containing polyamic acid show better mobility of $0.69\;cm^2/(Vs)$ than soluble type polyimide. Bias stress characteristics in air are discussed in the basis of the grain size.