Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characterization of Poly-Si TFT's using Amorphous-$Si_xGe_y$ for Seed Layer

Amorphous-$Si_xGe_y$을 seed layer로 이용한 Poly-Si TFT의 특성

  • Jung, Myung-Ho (Department of Electronic materials engineering, Kwangwoon Univ.) ;
  • Jung, Jong-Wan (Dept. of Nano-Sci. & Tech.) ;
  • Cho, Won-Ju (Department of Electronic materials engineering, Kwangwoon Univ.)
  • 정명호 (광운대학교 전자재료공학과) ;
  • 정종완 (세종대학교 나노신소재공학부) ;
  • 조원주 (광운대학교 전자재료공학과)
  • Published : 2007.06.21
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Abstract

Polycrystalline silicon thin-film-transistors (Poly-Si TFT's) with a amorphous-$Si_xGe_y$ seed layer have been fabricated to improve the performance of TFT. The dependence of crystal structure and electrical characteristics on the the Ge fractions in $Si_xGe_y$ seed layer were investigated. As a result, the increase of grain size and enhancement of electrical characteristics were obtained from the poly-Si TFT's with amorphous-SixGey seed layer.

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