Reverse annealing of boron doped polycrystalline silicon

  • Lim, Jung-Yoon (Dept. of Materials Science and Engineering, Hongik Univ.) ;
  • Hong, Won-Eui (Dept. of Materials Science and Engineering, Hongik Univ.) ;
  • Kim, Deok-Hoi (LTPS Team, AMLCD Business, Samsung Electronics) ;
  • Uemoto, Tstomu (LTPS Team, AMLCD Business, Samsung Electronics) ;
  • Kim, Chi-Woo (LTPS Team, AMLCD Business, Samsung Electronics) ;
  • Ro, Jae-Sang (Dept. of Materials Science and Engineering, Hongik Univ.)
  • Published : 2008.10.13

Abstract

Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

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Acknowledgement

Supported by : Samsung Electronics Company