A New AMOLED Pixel Circuit Compensating for Threshold Voltage Shift of OTFT

유기 박막 트랜지스터의 문턱전압 변화를 보상하기 위한 새로운 구조의 AMOLED 화소 회로에 관한 연구

  • Choi, Jong-Chan (Semiconductor & CAD Lab., Dept. of Electrical Engineering, Korea University) ;
  • Shin, A-Ram (Semiconductor & CAD Lab., Dept. of Electrical Engineering, Korea University) ;
  • Lee, Jae-In (Semiconductor & CAD Lab., Dept. of Electrical Engineering, Korea University) ;
  • Yoon, Bong-No (Semiconductor & CAD Lab., Dept. of Electrical Engineering, Korea University) ;
  • Sung, Man-Young (Semiconductor & CAD Lab., Dept. of Electrical Engineering, Korea University)
  • 최종찬 (고려대학교 전기공학과 반도체 및 CAD 연구실) ;
  • 심아람 (고려대학교 전기공학과 반도체 및 CAD 연구실) ;
  • 이재인 (고려대학교 전기공학과 반도체 및 CAD 연구실) ;
  • 윤봉노 (고려대학교 전기공학과 반도체 및 CAD 연구실) ;
  • 성만영 (고려대학교 전기공학과 반도체 및 CAD 연구실)
  • Published : 2008.06.19

Abstract

A new voltage-driven pixel circuit using soluble-processed organic thin film transistors (OTFTs) for an active matrix organic light emitting diode (AMOLED) is proposed. The proposed circuit is composed of four switching TFTs, one driving TFT and one storage capacitor. The proposed circuit can compensate for the degradation of OLED current caused by the threshold voltage shift of the OTFT. The simulation results show that the variation of OLED current corresponding to a 3V threshold voltage shift is decreased by 30% compared to the conventional 2TlC structure.

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