Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
- /
- Pages.97-98
- /
- 2008
Fabrication and characterization of n-ZnO:Ga/p-Si heterojunction light emitting diodes
n-ZnO:Ga/p-Si 이종접합 발광 다이오드의 제작 및 특성 평가
-
Han, W.S.
(Sungkyunkwan Univ.)
;
- Kong, B.H. (Sungkyunkwan Univ.) ;
- Ahn, C.H. (Sungkyunkwan Univ.) ;
-
Cho, H.K.
(Sungkyunkwan Univ.)
;
-
Kim, B.S.
(SKKU. Advanced Institute of Nanotechnology(SAINT))
;
-
Hwang, D.M.
(Sungkyunkwan Univ.)
-
한원석
(성균관대학교 신소재공학부)
;
- 공보현 (성균관대학교 신소재공학부) ;
- 안철현 (성균관대학교 신소재공학부) ;
-
조형균
(성균관대학교 신소재공학부)
;
-
김병성
(성균관대학교 나노과학기술원)
;
-
황동목
(성균관대학교 신소재공학부)
- Published : 2008.06.19
Abstract
n-ZnO/p-Si heterostructure is a good candidate for ZnO-based heterojunction light emitting diodes(LED) because of its competitive price and lower driving voltage. However, the conventional LED shows much lower extraction efficiency, because it has small top contact and large backside contact. In this structure, the injected current from the top contact enters the active region underneath the top contact. Thus, the emitted light is hindered by the opaque top contact. This problem can be solved by using a current-blocking layer(CBL) that prevents the current injection into the active region below the top contact.