한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.350-350
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- 2010
N-epi 영역과 Channel 폭에 따른 4H-SiC 고전력 VJFET 설계
4H-SiC High Power VJFET with modulation of n-epi layer and channel dimension
- Ahn, Jung-Joon (Kwangwoon University) ;
- Bahng, Wook (Korea Electrotechnology Research Institute) ;
- Kim, Sang-Cheol (Korea Electrotechnology Research Institute) ;
- Kim, Nam-Kyun (Korea Electrotechnology Research Institute) ;
- Koo, Sang-Mo (Kwangwoon University)
- 발행 : 2010.06.16
초록
Silicon carbide (SiC), one of the well known wide band gap semiconductors, shows high thermal conductivities, chemical inertness and breakdown energies. The design of normally-off 4H-SiC VJFETs [1] has been reported and 4H-SiC VJFETs with different lateral JFET channel opening dimensions have been studied [2]. In this work, 4H-SiC based VJFETs has been designed using the device simulator (ATLAS, Silvaco Data System, Inc). We varied the n-epi layer thickness (from