Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Development of PTCR Ceramics Device Fabricated by Liquid Phase Addition Method

액상첨가법에 의한 PTCR세라믹스 소자 개발

  • Lee, Dong-Soo (Dept. of Inorganic Materials Engineering, Myong Ji University) ;
  • Yun, Young-Ho (Dept. of Inorganic Materials Engineering, Myong Ji University) ;
  • Park, Sung (Dept. of Inorganic Materials Engineering, Myong Ji University) ;
  • Lee, Byung-Ha (Dept. of Inorganic Materials Engineering, Myong Ji University)
  • 이동수 (명지대학교 공과대학 무기재료공학과) ;
  • 윤영호 (명지대학교 공과대학 무기재료공학과) ;
  • 박성 (명지대학교 공과대학 무기재료공학과) ;
  • 이병하 (명지대학교 공과대학 무기재료공학과)
  • Published : 1997.07.01
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Abstract

The PTCR devices of BaTiO3 doped with Sb2O3, SiO2 were prepared by Liquid Addition Method(LPAM) where doping sources were used in the forms of Liquid. The amounts of doping in LPMA is smaller than that in solid state mixing method. Also the doping process in LPMA is very suitable for BaTiO3-based PTCR devices because it is easy to obtain homogeneous mixing and reproductivity. By optimizing the doping condition in BaTiO3 system, (0.09 mol% Sb2O3, 0.25 wt% SiO2 and 0.02 wt% MnO2) it was possible to fabricate BaTiO3-based PTCR devices whee the room-temperature resistivity and specific resistivity were 15{{{{ OMEGA }}cm and 2$\times$106 respectively.

Keywords

References

  1. J. Am. Ceram. Soc. v.43 no.6 Processing of Positive Temperature Coefficient Thermistor H. A. Sauaer;J. R. Fisher
  2. J. Am. Ceram. Soc. v.55 no.2 PTCR Behavior of BaTiO₃with Nb₂$O_5$ and MnO₂Additive T. Matsuoka;Y.Matsuo;S.Hayakawa
  3. J. Am. Ceram. Soc. Bull. v.50 no.8 Effect of Heat-Treatment on the PTCR Anomaly in Semiconducting Barium Titanate M. Kahn
  4. J. Am. Ceram. Soc. v.64 no.12 Influence of Stoichiometry on the PTCR Effect in Porous Barium Tatanate Ceramics M. Kuwabara
  5. Yogyo-Kyokai Shi v.90 no.8 Some Factor Affecting the Magnitude of the PTCR Effect in Semiconducting Barium Titanates M. Kuwabara
  6. Advances in Ceramics v.7 PTCR Effect in Porous Barium Titanate Ceramics M. Kuwabara
  7. 日本特許公報 昭 41-121 上罔久芳;梅谷和正
  8. 日本特許公報 昭 42-3855 上罔久芳;梅谷和正
  9. J. Mater. Soc. v.6 Semicinducting Barium Titanate W. Heywang
  10. Naturwiss v.49 O. Eberspach
  11. Phys Status Solidi v.35 Conducting and Insulating Incorporation of Antimony into BaTiO₃ Lattice H. Schmelz
  12. Phy. Status Solidi v.31 Incorporation of Antimony into Barium Titanate te Lattice H. Schemlz
  13. Phys. Stat. Soc. (a) v.47 The Influence of Kinetic Processes on the Electrical Conductivity of Donor-Doped BaTiO₃Ceramics R. Wernicke
  14. National Tech. Rep. v.21 no.3 Behavior od Mn Ion and Grain Boundary in BaTiO₃PTCR Semiconductor T. Matsuoka;M. Fujimura;Y. Matuo;S. Hayakawa
  15. Advanced in Ceramics v.1 Equilibrium Barriers in PTC Thermistors G. H. Jonker
  16. Adavance in Ceramics v.1 Mn-Doped BaTiO₃ S. B. Desu;E. C. Subbrarao
  17. J. Am. Ceram. Soc. v.73 no.11 Grain Boundary Chemistry of Barium Titanate and Strontium Titanate : Ⅱ, Origin of Electrical Barriers in Positive-Temperature Coefficient Thermistor Y. M. Chiang;T. Takagi
  18. IEEE MFT v.3 no.2 Ceramic Manufacturing Techology for the High Performance PTC Thermistor H. Ueoka;M. Yodogawa