References
- IEEE Trans. Electron Devices v.ED-29 T. Shibata;K. heida;M. Monaka
- Kor. Inst. Tele. Elect. v.29A no.12 Thin Oxide Degradation by Ti-polycide gate in MOS Device J.S. Park;W.S. Lee;D.J. Jung
- IEEE Trans. Electron Devices v.36 no.5 The Effect of Flourine in Silicon Dioxide Gate Dielectrics P.J. Wright;K.C. Saraawat
- J. Kor. Ceram. Soc. v.30 no.1 Characteristics of Gate Electrode for WSi2/CVD-Si/SiO₂ P.J. Park(et al.)
- Appl. Phys. Lett. v.50 Flourine in Low Pressure Chemical Vapor Deposited W/Si contact Structures Inclusion and Thermal Stability H.J. Whitlow(et al.)
- J. Appl. Phys. v.63 no.3 Phosphorus Redistribution in a WSi2/polycrystalline-Silicon Gate Structure during Furnace Annealing J. Torres(et al.)
- Inter Reliability Phys. 29th Annul Proc. Two Dimensional Inhomogeneous Structure at Gate-Electrode/Gate Insulator Interface causing Floeler-Nordheim Current Deviation in Nonvolatile Memory M. Ushiyama(et al.)