Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Study of Selective Etching of GaAs over AlGaAs and InGaP Semiconductors in High Density Planar Inductively Coupled BCl3/SF6 Plasmas

고밀도 평판형 유도결합 BCl3/SF6 플라즈마를 이용한 GaAs/AlGaAs와 InGaP 반도체의 선택적 식각에 관한 연구

  • Yoo Seungryul (School of Nano Eng./Institute of Nano-Technology Applications, Inje Univ.) ;
  • Ryu Hyunwoo (School of Nano Eng./Institute of Nano-Technology Applications, Inje Univ.) ;
  • Lim Wantae (School of Nano Eng./Institute of Nano-Technology Applications, Inje Univ.) ;
  • Lee Jewon (School of Nano Eng./Institute of Nano-Technology Applications, Inje Univ.) ;
  • Cho Guan Sik (School of Nano Eng./Institute of Nano-Technology Applications, Inje Univ.) ;
  • Jeon Minhyon (School of Nano Eng./Institute of Nano-Technology Applications, Inje Univ.) ;
  • Song Hanjung (School of Nano Eng./Institute of Nano-Technology Applications, Inje Univ.) ;
  • Lee BongJu (National Fusion R&D Center, Korea Basic Science Institute(KBSI)) ;
  • Ko Jong Soo (Department of Mechanical Eng., Pusan National Univ.) ;
  • Go Jeung Sang (Department of Mechanical Eng., Pusan National Univ.) ;
  • Pearton S. J. (Department of Materials Sci. and Eng., University of Florida)
  • 유승열 (인제대학교 나노공학부/나노기술 응용연구소) ;
  • 류현우 (인제대학교 나노공학부/나노기술 응용연구소) ;
  • 임완태 (인제대학교 나노공학부/나노기술 응용연구소) ;
  • 이제원 (인제대학교 나노공학부/나노기술 응용연구소) ;
  • 조관식 (인제대학교 나노공학부/나노기술 응용연구소) ;
  • 전민현 (인제대학교 나노공학부/나노기술 응용연구소) ;
  • 송한정 (인제대학교 나노공학부/나노기술 응용연구소) ;
  • 이봉주 (한국 기초과학 지원연구원 핵융합 연구개발 사업단) ;
  • 고종수 (부산대학교 기계공학부) ;
  • 고정상 (부산대학교 기계공학부) ;
  • Published : 2005.03.01
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Abstract

We investigated selective dry etching of GaAs over AlGaAs and InGaP in high density planar inductively coupled $BCl_3/SF_6$ plasmas. The process parameters were ICP source power (0-500 W), RE chuck power (0-30W) and gas composition $(60-100\%\;BCl_3\;in\;BCl_3/SF_6)$. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching. $BCl_3/SF_6$ selective etching of GaAs showed quite good results in this study. Selectivities of GaAs $(GaAs:AlGaAs\~36:1,\;GaAs:InGaP\~45:1)$ were superior at $18BCl_3/2SF_6$, 20 W RF chuck power, 300 W ICP source power and 7.5 mTorr. Addition of $(5-15\%)SF_6\;to\;BCl_3$ produced relatively high selectivities of GaAs over AlGaAs and InGaP during etching due to decrease of etch rates of AlGaAs and InGaP (boiling points of etch products: $AlF_3\~1300^{\circ}C,\;InF_3>1200^{\circ}C$ at atmosphere) at the condition. SEM and AFM data showed slightly sloped sidewall and somewhat rough surface$(RMS\~9nm)$. XPS study on the surface of processed GaAs proved a very clean surface after dry etching. It shows that planar inductively coupled $BCl_3/SF_6$ plasmas could be a good candidate for selective dry etching of GaAs over AlGaAs and InGaP.

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References

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