한국자기학회지 (Journal of the Korean Magnetics Society)

  • 제15권5호
  • /
  • Pages.287-291
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  • 2005
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  • 1598-5385(pISSN)
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  • 2233-6648(eISSN)
한국자기학회 (The Korean Magnetics Society)
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고압의 HfO2 가스 열처리에 따른 원자층 증착 H2 박막의 특성 연구

Study on the Characteristics of ALD HfO2 Thin Film by using the High Pressure H2 Annealing

  • 안승준 (선문대학교 자연과학대학 신소재과학과) ;
  • 박철근 (선문대학교 공과대학 정보통신공학부) ;
  • 안성준 (선문대학교 공과대학 정보통신공학부)
  • Ahn, Seung-Joon (Department of Physics & Advanced Materials Science, Sunmoon University) ;
  • Park, Chul-Geun (Division of Information and Communication Engineering, Sunmoon University) ;
  • Ahn, Seong-Joon (Division of Information and Communication Engineering, Sunmoon University)
  • 발행 : 2005.10.01
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초록

새로운 저온 박막증착 공정인 원자층 증착방법으로 증착된 $HfO_2$ 박막을 게이트의 유전물질로 사용하여 MOSFET 소자를 제작하기 위하여 $HfO_2$ 박막의 특성을 개선하고 평가하였다. MOSFET 소자는 p-type (100) 실리콘 웨이퍼 위에 두께가 $5\~6\;nm$인 원자층 증착 $HfO_2$ 박막을 증착한 다음, 압력이 $1\~20\;atm$의 $H_2$ 가스로 열처리 하여 활성 영역이 $5{\times}10^{-5}\;cm^2$이 되도록 알루미늄으로 전극을 증착하였다. 제작된 MOSFET 소자는 열처리 압력이 20 atm일 경우 $5\~10\%$ 정도 드레인 전류와 transconductance가 개선되었으며, 이것은 고집적화된 소자의 신뢰성 향상에 크게 기여할 것으로 생각된다.

We have investigated and tried to improve the characteristics of the thin $HfO_2$ layer deposited by ALD for fabricating a MOSFET device where the $HfO_2$ film worked as the gate dielectric. The substrate of MOSFET device is p-type (100) silicon wafer over which the $HfO_2$ dielectric layer with thickness of $5\~6\;nm$ has been deposited. Then the $HfO_2$ film was annealed with $1\~20\;atm\;H_2$ gas and subsequently aluminum electrodes was made so that the active area was $5{\times}10^{-5}\;cm^2$. We have found out that the drain current and transconductance increased by $5\~10\%$ when the $H_2$ gas pressure was 20 atm, which significantly contributed to the reliable operation of the high-density MOSFET devices.

키워드

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