긴 레이저 조사방식에 의한 저밀도 이광자 광중합 영역을 이용한 Sub-100nm 정밀도의 엠보싱 패턴제작

Fabrication of Sub-100 nm Embossing Patterns using Weakly-Polymerized Region via Long-Exposure Technique (LET) in Two-Photon Polymerization

  • 박상후 (한국과학기술원 기계공학과 대학원) ;
  • 임태우 (한국과학기술원 기계공학과 대학원) ;
  • 양동열 (한국과학기술원 기계공학과)
  • 발행 : 2007.01.01

초록

A long-exposing technique (LET) has been conducted to create nanoscale patterns applicable to diverse micro-devices using two-photon polymerization (TPP). By the weakly-polymerized region via the LET, double-layered embossing patterns can be fabricated simply in a single step. The LET makes possible a voxel and its surrounding to be fully grown into more than 500 nm in lateral size and weakly-polymerized region (WPR), respectively. In the WPR. interconnecting ribs between voxels are generated, and they lead to the creation of double-layered dot patterns. Moreover, by controlling the distance between voxels, various shapes of interconnecting rib can be fabricated when the LET is applied. Various embossing patterns were fabricated to evaluate the usefulness of the proposed technique as a novel nanopatterning technique in TPP.

키워드

참고문헌

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