Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
권호 표지

Properties evaluation for ESD Protection device of Diode type using TLP evaluation method

TLP 평가기법을 이용한 Diode type의 ESD 보호소자 특성 평가

  • Lee, Tae-Il (Department of Electronics Engineering, Chongju University) ;
  • Kim, Hong-Bae (Division of Electronics & Information Engineering, Chongju University)
  • 이태일 (청주대학교 전자공학과) ;
  • 김홍배 (청주대학교 전자정보공학부)
  • Published : 2007.12.30
Download PDF
⟨ Previous Next ⟩

Abstract

In paper, We evaluated for various diode type ESD protection device using TLP measurement method. An Evaluation diode is divided to Enclosed type and Stripe type as pattern style in extensive. These diodes is split up followed factor that Anode-to-Cathod space, N+ region width, Multi type and Contact to Active space. After a TLP measurement, we can be got the Vt2, It2 by I-V characteristic values. In the results, diode of enclosed type is present relatively higher Current capability(It2) than stripe type in a same voltage conditions. And the Second-breakdown voltage(Vt2) were that Stripe type's diode higher than Enclosed type's diode as have $14{\sim}15V$. Finally we suggest the best diode design condition as ESD protection device using entire consequence.

Keywords