Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Shubnikov-de Haas Oscillations in an Individual Single-Crystalline Semimetal Bismuth Nanowire

단결정 반금속 비스무스 단일 나노선의 Shubnikov-de Haas 진동

  • Kim, Jeong-Min (Department of Materials Science and Engineering, Yonsei University) ;
  • Ham, Jin-Hee (Department of Materials Science and Engineering, Yonsei University) ;
  • Shim, Woo-Young (Department of Materials Science and Engineering, Yonsei University) ;
  • Lee, Kyoung-Il (Department of Materials Science and Engineering, Yonsei University) ;
  • Jeon, Kye-Jin (Department of Materials Science and Engineering, Yonsei University) ;
  • Jeung, Won-Young (Korea Institute of Science and Technology (KIST)) ;
  • Lee, Woo Young (Department of Materials Science and Engineering, Yonsei University)
  • 김정민 (연세대학교 신소재공학과) ;
  • 함진희 (연세대학교 신소재공학과) ;
  • 심우영 (연세대학교 신소재공학과) ;
  • 이경일 (연세대학교 신소재공학과) ;
  • 전계진 (연세대학교 신소재공학과) ;
  • 정원용 (한국과학기술연구원) ;
  • 이우영 (연세대학교 신소재공학과)
  • Published : 2008.02.25
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Abstract

The magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method are reported. A four-terminal device based on an individual 400-nm-diameter nanowire was successfully fabricated using a plasma etching technique that removed an oxide layer that had formed on the surface of the nanowire. Large transverse ordinary magnetoresistance (1401%) and negative longitudinal ordinary magnetoresistance (-38%) were measured at 2 K. It was observed that the period of Shubnikov-de Haas oscillations in transverse geometry was $0.074^{T-1}$, $0.16^{T-1}$ and $0.77^{T-1}$, which is in good agreement with those of bulk Bi. However, it was found that the period of SdH oscillation in longitudinal geometry is $0.24^{T-1}$, which is larger than the value of $0.16^{T-1}$ reported for bulk Bi. The deviation is attributable to the spatial confinement arising from scattering at the nanowire surface boundary.

Keywords

References

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