Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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HMDS Treatment of Ordered Mesoporous Silica Film for Low Dielectric Application

저유전물질로의 응용을 휘한 규칙성 메조포러스 실리카 박막에의 HMDS 처리

  • Ha, Tae-Jung (School of Advanced Materials Science and Engineering, Yonsei University) ;
  • Choi, Sun-Gyu (School of Advanced Materials Science and Engineering, Yonsei University) ;
  • Yu, Byoung-Gon (Electronics and Telecommunications Research Institute) ;
  • Park, Hyung-Ho (School of Advanced Materials Science and Engineering, Yonsei University)
  • Published : 2008.01.31
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Abstract

In order to reduce signal delay in ULSI, an intermetal material of low dielectric constant is required. Ordered mesoporous silica film is proper to intermetal dielectric due to its low dielectric constant and superior mechanical properties. The ordered mesoporous silica film prepared by TEOS (tetraethoxysilane) / MTES (methyltriethoxysilane) mixed silica precursor and Brij-76 surfactant was surface-modified by HMDS (hexamethyldisilazane) treatment to reduce its dielectric constant. HMDS can substitute $-Si(CH_3)_3$ groups for -OH groups on the surface of silica wall. In order to modify interior silica wall, HMDS was treated by two different processes except the conventional spin coating. One process is that film is dipped and stirred in HMDS/n-hexane solution, and the other process is that film is exposed to evaporated HMDS. Through the investigation with different HMDS treatment, it was concluded that surface modification in evaporated HMDS was more effective to modify interior silica wall of nano-sized pores.

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References

  1. A. Jain, S. Rogojevic, S. Ponoth, N. Agarwal, I. Matthew, W. N. Gill, P. Persans, M. Tomozawa, J. L. Plawsky, and E. Simonyi, "Porous Silica Materials as $Low-{\kappa}$ Dielectrics for Electronic and Optical Interconnects," Thin Solid Films, 398 513-22 (2001) https://doi.org/10.1016/S0040-6090(01)01311-6
  2. K. Maex, M. R. Baklanov, D. Shamiryan, F. Lacopi, S. H. Brongersma, and Z. S. Yanoviskaya, "Low Dielectric Constant Materials for Microelectronics," J. Appl. Phys., 93 8793-841 (2003) https://doi.org/10.1063/1.1567460
  3. R. Rosenberg, D. C. Edelstein, C. K. Hu, and K. P. Rodbell, "Copper Metallization for High Performance Silicon Technology," Annual Review of Materials Science, 30 229-62 (2000) https://doi.org/10.1146/annurev.matsci.30.1.229
  4. L. W. Hrubesh, "Aerogel application," J. Non-cryst. Solids, 225 [1-3] 335-42 (1998) https://doi.org/10.1016/S0022-3093(98)00135-5
  5. S.-B. Jung and H.-H. Park, "Control of Wall Thickness in the Formation of Ordered Mesoporous Silica Films," Thin Solid Films, 494 320-24 (2006) https://doi.org/10.1016/j.tsf.2005.08.160
  6. D. Grosso, F. Cagnol, G. J. de. A. A. Soler-Illia, E. L. Crepaldi, H. Amenitsch, A. Brunet-Bruneau, A. Bourgeois, and C. Sanchez, "Fundamentals of Mesostructuring Through Evaporation-Induced Self-Assembly," Adv. Funct. Mater., 14 309-22 (2004) https://doi.org/10.1002/adfm.200305036
  7. S.-B. Jung, T.-J. Ha, and H.-H. Park, "Roughness and Pore Structure Control of Ordered Mesoporous Silica Films for the Enhancement of Electrical Properties," J. Appl. Phys., 101 024109-1-9 (2007) https://doi.org/10.1063/1.2424405
  8. S.-B. Jung, T.-J. Ha, and H.-H. Park, "Investigation of the Properties of Organically Modified Ordered Mesoporous Silica Films," J. Colloid Interf. Sci., in-press https://doi.org/10.1016/j.jcis.2008.01.003
  9. A. A. Sonin, J. B. Seon, M. H. Yang, H. J. Shin, and H. D. Jeong, "New Hydrophobic Microporous Dielectric Films Made on the Basis of the CTAB/TSC-2/TEOS Precursor Solution," Mol. Cryst. Liq. Cryst., 451 [1] 99-106 (2006) https://doi.org/10.1080/154214090960108
  10. S. I. Kuroki and T. Kikkawa, "Measurement and Analysis of Water Adsorption in Porous Silica Films," J. Electrochem. Soc., 153 [8] G759-64 (2006) https://doi.org/10.1149/1.2210573
  11. T.-J. Ha, S. G. Choi, S.-B. Jung, B.-G. Yu, and H.-H. Park, "The Improvement of Mechanical and Dielectric Properties of Ordered Mesoporous Silica Film using TEOS-MTES Mixed Silica Precursor," Ceram. Int. (2007), doi:10.1016/ j.ceramint.2007.09.070
  12. J. Farkas, J. Hampden-Smith, and T. T. Kodas, "FTIR Studies of the Adsorption/Desorption Behavior of Cu Chemical Vapor Deposition Precursors on Silica," J. Electrochem. Soc., 141 [12] 3547-55 (1994) https://doi.org/10.1149/1.2059368