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The Pulsed Id-Vg methodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics

  • Received : 2009.06.22
  • Published : 2010.06.30
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Abstract

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

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