Transactions of the Korean Society of Mechanical Engineers A (대한기계학회논문집A)

The Korean Society of Mechanical Engineers (대한기계학회)
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Localized Oxidation of (100) Silicon Surface by Pulsed Electrochemical Processes Based on AFM

AFM 기반 Pulse 를 이용한 전기화학적 가공

  • Lee, Jeong-Min (Dep. of Mechanical Design Engineering, Chosun Univ.) ;
  • Kim, Sun-Ho (Dep. of Mechanical Design Engineering, Chosun Univ.) ;
  • Park, Jeong-Woo (Dep. of Mechanical Design Engineering, Chosun Univ.)
  • 이정민 (조선대학교 기계설계공학과) ;
  • 김선호 (조선대학교 기계설계공학과) ;
  • 박정우 (조선대학교 기계설계공학과)
  • Received : 2010.05.13
  • Accepted : 2010.08.23
  • Published : 2010.11.01
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Abstract

In this study, we demonstrate a nano-scale lithograph obtained on localized (100) silicon (p-type) surface using by modified AFM (Atomic force microscope) apparatuses and by adopting controlling methods. AFM-based experimental apparatuses are connected to a customized pulse generator that supplies electricity between the conductive tip and the silicon surface, while maintaining a constant humidity throughout the lithography process. The pulse durations are controlled according to various experimental conditions. The electrochemical reaction induced by the pulses occurs in the gap between the conductive tip and silicon surface and result in the formation of nanoscale oxide particles. Oxide particles with various heights and widths can be created by AFM surface modification; the size of the oxide particle depends on the pulse durations and the applied electrical conditions under a humid environment.

본 연구는 AFM 을 이용하여 nano scale 의 Lithography 를 구현하는 것이다. 외부의 pulse generator 를 통하여 전류를 통전 시키는 방법을 수정함으로써, 일정 습도를 유지한 상태의 AFM 내부에서 Si-wafer 의 표면과 Tip의 사이에 전원을 인가하고 pulse generator 에서 임의로 pulse 폭의 변화를 준다. Si-wafer 표면에서 물 분자가 Tip과 wafer 사이의 직접적인 전류의 이동조절로 인해 전기 화학적 반응을 적절히 제한하여 산화물을 생성시키는 방법이다. 이렇게 생성된 산화물은 불산 처리를 통하여 산화물을 식각시켜 미세 그루브를 구현 할 수 있다. 본 연구를 통한 나노 패턴 생성 기법은 나노 머시닝 기술의 진보에 잠재적 가능성을 제시한다.

Keywords

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