한국재료학회지 (Korean Journal of Materials Research)

  • 제21권2호
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  • Pages.111-114
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  • 2011
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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ZnO 나노 막대 성장을 위한 기판층으로서 hexagonal β상 Ni(OH)2 나노 시트 합성 및 미세구조 분석

Synthesis of Hexagonal β-Ni(OH)2 Nanosheet as a Template for the Growth of ZnO Nanorod and Microstructural Analysis

  • 황성환 (연세대학교 신소재공학과 정보전자재료연구실) ;
  • 이태일 (연세대학교 신소재공학과 정보전자재료연구실) ;
  • 최지혁 (연세대학교 신소재공학과 정보전자재료연구실) ;
  • 명재민 (연세대학교 신소재공학과 정보전자재료연구실)
  • Hwang, Sung-Hwan (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Lee, Tae-Il (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Choi, Ji-Hyuk (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Myoung, Jae-Min (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University)
  • 투고 : 2010.12.23
  • 심사 : 2011.01.07
  • 발행 : 2011.02.27
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초록

As a growth-template of ZnO nanorods (NR), a hexagonal $\beta-Ni(OH)_2$ nanosheet (NS) was synthesized with the low temperature hydrothermal process and its microstructure was investigated using a high resolution scanning electron microscope and transmission electron microscope. Zinc nitrate hexahydrate was hydrolyzed by hexamethylenetetramine with the same mole ratio and various temperatures, growth times and total concentrations. The optimum hydrothermal processing condition for the best crystallinity of hexagonal $\beta-Ni(OH)_2$ NS was determined to be with 3.5 mM at $95^{\circ}C$ for 2 h. The prepared $Ni(OH)_2$ NSs were two dimensionally arrayed on a substrate using an air-water interface tapping method, and the quality of the array was evaluated using an X-ray diffractometer. Because of the similarity of the lattice parameter of the (0001) plane between ZnO (wurzite a = 0.325 nm, c = 0.521 nm) and hexagonal $\beta-Ni(OH)_2$ (brucite a = 0.313 nm, c = 0.461 nm) on the synthesized hexagonal $\beta-Ni(OH)_2$ NS, ZnO NRs were successfully grown without seeds. At 35 mM of divalent Zn ion, the entire hexagonal $\beta-Ni(OH)_2$ NSs were covered with ZnO NRs, and this result implies the possibility that ZnO NR can be grown epitaxially on hexagonal $\beta-Ni(OH)_2$ NS by a soluble process. After the thermal annealing process, $\beta-Ni(OH)_2$ changed into NiO, which has the property of a p-type semiconductor, and then ZnO and NiO formed a p-n junction for a large area light emitting diode.

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