Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Evaluation of Flexural Strength of Silicon Die with Thickness by 4 Point Bending Test

4점굽힘시험에 의한 실리콘 다이의 두께에 따른 파단강도 평가

  • Min, Yoon-Ki (Department of Materials Science & Engineering, Seoul National University of Science & Technology) ;
  • Byeon, Jai-Won (Department of Materials Science & Engineering, Seoul National University of Science & Technology)
  • 민윤기 (서울과학기술대학교 신소재공학과) ;
  • 변재원 (서울과학기술대학교 신소재공학과)
  • Received : 2011.03.05
  • Accepted : 2011.03.21
  • Published : 2011.03.31
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Abstract

In this study, flexural strength and fracture behavior of silicon die from single crystalline silicon wafer were investigated as a function of thickness. Silicon wafers with various thickness of 300, 200, 180, 160, 150, and 100 ${\mu}m$ were prepared by mechanical grinding and polishing of as-saw wafers. Flexural strength of 40 silicon dies (size: 62.5 mm${\times}$4 mm) from each wafer was measured by four point bending test, respectively. For statistical analysis of flexural strength, shape factor(i.e., Weibull modulus) and scale factor were determined from Weibull plot. Flexural strength reflecting both statistical fracture probability and size (thickness) effect of brittle silicon die was obtained as a linear function of die thickness. Fracture appearance was discussed in relation with measured fracture strength.

전자기기의 고집적화를 위해 실리콘 웨이퍼의 두께가 점점 얇아지고 있으며 이로 인해 제조공정 중 균열이나 파손이 발생할 가능성이 높아지고 있다. 본 연구에서는 300 ${\mu}m$~100 ${\mu}m$ 두께의 반도체용 단결정 실리콘 웨이퍼의 파단 강도 및 파괴특성을 평가하였다. 기계적 연마를 통해 두께 (300, 200, 180, 160, 150, 100 ${\mu}m$)가 다른 실리콘 웨이퍼를 준비하였다. 하나의 웨이퍼에서 40개의 실리콘 다이(크기 : 62.5 mm${\times}$4 mm)를 얻어 4점 굽힘시험을 통해 평균 강도값을 구하였다. 강도분포의 통계적 해석을 위해 와이블 선도를 이용하여 형상인자(와이블 계수)와 크기인자(확률적 파괴강도)를 얻었다. 취성 실리콘 다이의 시편 크기(두께)효과와 파단 확률이 고려된 통계적 파단강도 값을 실리콘 다이 두께의 함수로 얻었다. 관찰된 파괴양상을 측정된 파단강도와 관련하여 고찰하였다.

Keywords

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