JSTS:Journal of Semiconductor Technology and Science

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An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications

  • Ghosh, Pujarini (Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus) ;
  • Haldar, Subhasis (Department of Physics, Motilal Nehru College, University of Delhi) ;
  • Gupta, R.S. (Department of Electronic and Communication engineering, Maharaja Agrasen Institute of Technology) ;
  • Gupta, Mridula (Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus)
  • Received : 2011.12.27
  • Published : 2012.12.31
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Abstract

An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation.

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References

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