JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Analytic Model of Spin-Torque Oscillators (STO) for Circuit-Level Simulation

  • Ahn, Sora (Department of Electronics Engineering, Ewha Womans University) ;
  • Lim, Hyein (Department of Electronics Engineering, Ewha Womans University) ;
  • Shin, Hyungsoon (Department of Electronics Engineering, Ewha Womans University) ;
  • Lee, Seungjun (Department of Electronics Engineering, Ewha Womans University)
  • Received : 2012.04.30
  • Published : 2013.02.28
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Abstract

Spin-torque oscillators (STO) is a new device that can be used as a tunable microwave source in various wireless devices. Spin-transfer torque effect in magnetic multilayered nanostructure can induce precession of magnetization when bias current and external magnetic field are properly applied, and a microwave signal is generated from that precession. We proposed a semi-empirical circuit-level model of an STO in previous work. In this paper, we present a refined STO model which gives more accuracy by considering physical phenomena in the calculation of effective field. Characteristics of the STO are expressed as functions of external magnetic field and bias current in Verilog-A HDL such that they can be simulated with circuit-level simulators such as Hspice. The simulation results are in good agreement with the experimental data.

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References

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