Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effect of B2O3 Additives on GaN Powder Synthesis from GaOOH

GaOOH로부터 GaN 분말의 합성에 미치는 B2O3의 첨가효과

  • Song, Changho (Midas System Ltd. Co.) ;
  • Shin, Dongwhee (Department of Materials Engineering, Research center for Infotronic Materials and Devices Hanbat National University) ;
  • Byun, Changsob (Department of Materials Engineering, Research center for Infotronic Materials and Devices Hanbat National University) ;
  • Kim, Seontai (Department of Materials Engineering, Research center for Infotronic Materials and Devices Hanbat National University)
  • 송창호 ((주)마이다스시스템) ;
  • 신동휘 (한밭대학교 신소재공학과 및 정보전자부품소재연구소) ;
  • 변창섭 (한밭대학교 신소재공학과 및 정보전자부품소재연구소) ;
  • 김선태 (한밭대학교 신소재공학과 및 정보전자부품소재연구소)
  • Received : 2012.10.25
  • Accepted : 2012.12.21
  • Published : 2013.02.27
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Abstract

In this study, GaN powders were synthesized from gallium oxide-hydroxide (GaOOH) through an ammonification process in an $NH_3$ flow with the variation of $B_2O_3$ additives within a temperature range of $300-1050^{\circ}C$. The additive effect of $B_2O_3$ on the hexagonal phase GaN powder synthesis route was examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Fourier transformation infrared transmission (FTIR) spectroscopy. With increasing the mol% of $B_2O_3$ additive in the GaOOH precursor powder, the transition temperature and the activation energy for GaN powder formation increased while the GaN synthesis limit-time ($t_c$) shortened. The XPS results showed that Boron compounds of $B_2O_3$ and BN coexisted in the synthesized GaN powders. From the FTIR spectra, we were able to confirm that the GaN powder consisted of an amorphous or cubic phase $B_2O_3$ due to bond formation between B and O and the amorphous phase BN due to B-N bonds. The GaN powder synthesized from GaOOH and $B_2O_3$ mixed powder by an ammonification route through ${\beta}-Ga_2O_3$ intermediate state. During the ammonification process, boron compounds of $B_2O_3$ and BN coated ${\beta}-Ga_2O_3$ and GaN particles limited further nitridation processes.

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References

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