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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG-Doped Deep Trench of p-Pillar

  • Kim, Sang Gi (Components & Materials Research Laboratory, ETRI) ;
  • Park, Hoon Soo (Division of Green Energy Engineering, Uiduk University) ;
  • Na, Kyoung Il (Components & Materials Research Laboratory, ETRI) ;
  • Yoo, Seong Wook (Components & Materials Research Laboratory, ETRI) ;
  • Won, Jongil (Components & Materials Research Laboratory, ETRI) ;
  • Koo, Jin Gun (Components & Materials Research Laboratory, ETRI) ;
  • Chai, Sang Hoon (Department of Electronic Engineering, Hoseo University) ;
  • Park, Hyung-Moo (Division of Electronics and Electrical Engineering, Dongguk University) ;
  • Yang, Yil Suk (Components & Materials Research Laboratory, ETRI) ;
  • Lee, Jin Ho (Components & Materials Research Laboratory, ETRI)
  • Received : 2012.12.06
  • Accepted : 2013.03.16
  • Published : 2013.08.01
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Abstract

In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p-pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n-drift layer due to the trenched p-pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device.

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References

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