JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Macro-Model of Magnetic Tunnel Junction for STT-MRAM including Dynamic Behavior

  • Kim, Kyungmin (Integrated Circuits Laboratory, Hanyang University) ;
  • Yoo, Changsik (Integrated Circuits Laboratory, Hanyang University)
  • Received : 2014.05.08
  • Accepted : 2014.10.14
  • Published : 2014.12.30
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Abstract

Macro-model of magnetic tunnel junction (MTJ) for spin transfer torque magnetic random access memory (STT-MRAM) has been developed. The macro-model can describe the dynamic behavior such as the state change of MTJ as a function of the pulse width of driving current and voltage. The statistical behavior has been included in the model to represent the variation of the MTJ characteristic due to process variation. The macro-model has been developed in Verilog-A.

Keywords

References

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