Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Selective area growth of micro-sized AlGaN array structures on GaN stripes

GaN 스트라이프 꼭대기 위의 AlGaN 어레이 미세구조의 선택적 결정 성장

  • Lee, Seunghyun (Department of Electronic Materials Engineering, Korea Maritime and Ocean University) ;
  • Ahn, Hyungsoo (Department of Electronic Materials Engineering, Korea Maritime and Ocean University) ;
  • Yang, Min (Department of Electronic Materials Engineering, Korea Maritime and Ocean University)
  • 이승현 (한국해양대학교 전자소재공학과) ;
  • 안형수 (한국해양대학교 전자소재공학과) ;
  • 양민 (한국해양대학교 전자소재공학과)
  • Received : 2015.09.14
  • Accepted : 2015.10.12
  • Published : 2015.10.31
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Abstract

The growth and characterization of micro sized AlGaN array structures selectively grown by metal organic chemical vapor deposition (MOCVD) on GaN stripes are reported. The shape of the AlGaN array structures depends on the size of exposed area for selective growth. The AlGaN array structures grown selectively on relatively large exposed area have regular shapes resembling those of the GaN stripes on the substrate, while samples selectively grown on relatively small exposed area have irregular shapes. The phonon frequency of the AlGaN array structures increases with increasing Al composition in the AlGaN structure. However, at relatively high Al composition (x = 0.28 in this research), the phonon frequency decreases slightly from the expected value not only because of large tensile strain associated with large differences between the lattice constants of the AlGaN structure and underlying GaN stripes but also changes of crystal facet direction during the selective growth.

GaN 스트라이프 구조의 정상 부분에 Metal Organic Chemical Vapor Deposition(MOCVD) 방법에 의해 선택적으로 결정 성장된 마이크로 크기의 AlGaN 어레이 구조의 성장과 그 특성에 관해 연구하였다. AlGaN 어레이 구조의 형태 변화가 선택 성장을 위한 노출 면적에 의존한다는 것을 확인하였다. 상대적으로 넓게 노출 된 성장 영역 위에서 선택 성장된 AlGaN 어레이 구조는 기판 위의 GaN 스트라이프와 유사한 규칙적인 모양을 가지는 반면 상대적으로 좁게 노출된 영역 위에서 선택 성장 된 AlGaN 어레이 구조는 불규칙한 모양을 가진다. 한편, Al 조성비가 증가함에 따라 AlGaN 어레이 미세 구조에 대한 고유 포논 진동수도 높아짐을 확인할 수 있었다. 하지만 상대적으로 높은 Al 조성비에서는 고유 포논 진동수는 AlGaN 구조와 그 아래의 GaN 스트라이프 사이의 큰 격자상수 차이와 선택적 결정 성장 과정 동안의 결정면 방향의 변화에 의해 강한 tensile strain으로 인해 다시 감소하는 경향을 보임을 확인하였다.

Keywords

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