Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Hydrogen Detection of Titanium Dioxide Layer Formed by Reactive Sputtering on SiC Substrates

SiC 기판상에 반응 스퍼터링에 의해 형성된 TiO2막의 수소가스 검지 특성

  • Kim, Seong-Jeen (Department of Electronic Engineering, Kyungnam University)
  • 김성진 (경남대학교 전자공학과)
  • Received : 2016.08.31
  • Accepted : 2016.11.04
  • Published : 2016.12.01
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Abstract

We investigated a SiC-based hydrogen gas sensor with MIS (metal-insulator-semiconductor) structure for high temperature applications. The sensor was fabricated by $Pd/TiO_2/SiC$ structure, and a thin titanium dioxide ($TiO_2$) layer was exploited for sensitivity improvement. In the experiment, dependences of I-V characteristics and capacitance response properties on hydrogen gas concentrations from 0 to 2,000 ppm were analyzed at room temperature to $400^{\circ}C$. As the result, our sensor using $TiO_2$ dielectric layer showed possibilities with regard to use in hydrogen gas sensors for high-temperature applications.

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References

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