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Analysis of temperature distribution of wafers inside LPCVD chamber for improvement of thickness uniformity

두께 균일도 향상을 위한 LPCVD 챔버 내 웨이퍼 온도 분포 분석

  • Kang, Seung-Hwan (Graduate School, Department of Mechanical Engineering, Sungkyunkwan University) ;
  • Kim, Byeong Hoon (Samsung Electronics, Memory Business) ;
  • Kong, Byung Hwan (Samsung Electronics, Memory Business) ;
  • Lee, Jae Won (Graduate School, Department of Mechanical Engineering, Sungkyunkwan University) ;
  • Ko, Han Seo (School of Mechanical Engineering, Sungkyunkwan University)
  • Received : 2016.07.25
  • Accepted : 2016.08.17
  • Published : 2016.08.31

Abstract

The wafer temperature and its uniformity inside the LPCVD chamber were analyzed. The temperature uniformity at the end of the wafer load depends on the heat-insulating cap. The finite difference method was used to investigate the radiation and conduction heat transfer mechanisms, and the temperature field and heat diffusion in the LPCVD chamber was visualized. It was found that the temperature uniformity of the wafers could be controlled by the size and distance of the heat-insulating cap.

Keywords

References

  1. Oppenheim, A., 1956, "Radiation analysis by the network method," Transactions of the American Society of Mechanical Engineers 78, 725-735.
  2. Incropera, F. P., Dewitt, D. P., Bergman, T. L., Lavine, A. S., 2007, Fundamentals of heat and mass transfer, 6th ed., John Wiley, Hoboken, NJ.
  3. Siegel, R., Howell, J. R., 2002, Thermal radiation heat transfer, Taylor & Francis, New York.
  4. http://www.thermalradiation.net/sectionc/C-41.html
  5. Badgwell, T. A., Trachtenberg, I., Edgar, T. F., 1994, "Modeling the wafer temperature profile in a multiwafer LPCVD furnace," Journal of the Electrochemical Society, 141(1), 161-172. https://doi.org/10.1149/1.2054678
  6. Kim, I. K., Kim, W. S., 1999, "Theoretical analysis of wafer temperature dynamics in a low pressure chemical vapor deposition reactor," International Journal of Heat and Mass Transfer, 42(22), 4131-4142. https://doi.org/10.1016/S0017-9310(99)00069-1
  7. Munro, R. G., 1997, "Material properties of a sintered ${\alpha}$-SiC," J. Phys. Chem. Ref. Data, 26(5), 1195-1203. https://doi.org/10.1063/1.556000
  8. Nilsson, O., Mehling, H., Horn, R., Fricke, J., Hofmann, R., Muller, S.G., Eckstein, R., Hofmann, D., 1997, "Determination of the thermal diffusivity and conductivity of monocrystalline silicon carbide (300-2300 K)," High Temp. High Press., 29(1), 73-79. https://doi.org/10.1068/htec142
  9. Glassbrenner, C. J. and Glen A. Slack., 1964. "Thermal Conductivity of Silicon and Germanium from $3^{\circ}$K to the Melting Point," Physical Review, 134(4A), A1058-A69. https://doi.org/10.1103/PhysRev.134.A1058
  10. Kang, S.-H., Lee, S. H., Kim, B. H. and Ko, H. S., 2015, "Analysis and Visualization of Temperature Field for Wafer Batch in Furnace," Journal of The Korean Society of Visualization, 13(3), 24-28. https://doi.org/10.5407/JKSV.2015.13.3.024