Electronics and Telecommunications Trends (전자통신동향분석)

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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III-V/Si Optical Communication Laser Diode Technology

광통신 III-V/Si 레이저 다이오드 기술 동향

  • Published : 2021.06.01
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Abstract

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

Keywords

Acknowledgement

이 논문은 한국전자통신연구원 기본 사업의 일환으로 수행되었음[21ZB1120, 3D 집적 광소수신기를 위한 III-V/Si 기반 광전소자 기술 개발].

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