Nuclear Engineering and Technology

  • 제55권9호
  • /
  • Pages.3334-3341
  • /
  • 2023
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  • 1738-5733(pISSN)
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  • 2234-358X(eISSN)
한국원자력학회 (Korean Nuclear Society)
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Study on changes in electrical and switching characteristics of NPT-IGBT devices by fast neutron irradiation

  • Hani Baek (Korea Research Institute of Standards and Science) ;
  • Byung Gun Park (Korea Atomic Energy Research Institute) ;
  • Chaeho Shin (Korea Research Institute of Standards and Science) ;
  • Gwang Min Sun (Korea Atomic Energy Research Institute)
  • 투고 : 2023.01.02
  • 심사 : 2023.05.30
  • 발행 : 2023.09.25
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초록

We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 109 to 1.82 × 1013 n/cm2. Electrical characteristics of the IGBT device such as I-V, forward voltage drop and additionally switching characteristics of turn-on and -off were measured. As the neutron fluence increased, the device's threshold voltage decreased, the forward voltage drop increased significantly, and the turn-on and turn-off time became faster. In particular, the delay time of turn-on switching was improved by about 35% to a maximum of about 39.68 ns, and that of turn-off switching was also reduced by about 40%-84.89 ns, showing a faster switching.

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과제정보

This work was supported by a National Research Council of Science and Technology (NST) grant from the Korean Government (MSIT) (C.Shin, No. CAP-18-04-KRISS), the National Research Foundation of Korea(NRF) grant from Korean government (MSIT) (C. Shin, No. NRF-2020M3H4A3081882, G.M. Sun, No.1711078081).

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