This paper proposes a relative lifetime test method of MgO thin film. The suggested test conditions are 5$0^{\circ}C$, 400Torr, 20% over-voltage and 300KHz. The relative lifetime of MgO thin film is significantly affected by the MgO preparing conditions and Xe partial pressure. As result, the lifetime of the AC plasma display panel (PDP) is increased with an MgO thickness of 2000$\AA$ to 8000$\AA$ but is saturated over 5000$\AA$ (up to 9000 $\AA$). In addition, as Xe partial pressure increases, AC PDP lifetime increases.

Lead zirconate titanate (PZT) thin films were fabricated by the pulsed laser ablation deposition (PLAD) method onto Pt/Ti/SiO$_2$/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The well-crystallized perovskite phase and the (101) preferred orientation were obtained by two-step annealing at the conditions of $650^{\circ}C$, 1 hour. It was found that the temperature for the pulsed laser ablated PZT films annealed via a two-step annealing process can be reduced 20$0^{\circ}C$ compared to that of the conventional three-step annealing temperature profile for enhancing the transformation of the perovskite phase. The remanent polarization and the coercive field of this film were about 20 $\mu$C/$\textrm{cm}^2$ and 46 kV/cm, while the dielectric constant and loss values measured at 1 KHz were approximately 860 and 0.04, respectively. The interesting phenomena of this film, such as vertical shift in hysteresis curve, are also discussed.

To evaluate the radiation degradation of ethylene propylene rubber (EPR), radiation effects on EPR were investigated by using dielectric analysis and thermal-gravimetric analysis. Permittivity, loss factor, tan$\delta$, and thermal decomposition temperature were observed for ${\gamma}$-ray irradiated EPR. As the radiation dose was increased, the peak temperature of the loss factor and tans of EPR were increased and loss factor and tan$\delta$ at peak temperature were decreased. Activation energies were calculated using loss factor and thermal decomposition for ${\gamma}$-ray irradiated EPR as well. The trends of both calculated activation energies showed the same tendencies as radiation dose was increased.

This paper examines the electrical characteristic of single oxide layer due to various diffusion conditions, substrate orientations, substrate resistivity and gas atmosphere in a diffusion furnace. The oxide quality was examined through the capacitance-voltage characteristic due to the annealing time after oxidation process, and the capacitance-voltage characteristics of the single oxide layer by will be described via semiconductor device simulation.

Electrical properties such as permittivity and tan$\delta$ of unaged (control) and aged (72 h at 18$0^{\circ}C$) mica/epoxy composites of 130 ${\mu}{\textrm}{m}$ thickness were measured and their surface conditions were characterized using scanning electron microscopy (SEM), Fourier transform infrared (FTIR), electron spectroscopy for chemical analysis (ESCA), differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). Both permittivity and tan6 of control specimens were higher than those of short-time aged specimens. FTIR results show a new peak at 1710 $cm^{-1}$ / for short-time aged specimens, originating from carbonyl group formed by the oxidation reaction during the aging process. ESCA results show that the binding energy at 532.9 eV representing the singlet state of oxygen ( $O_{1s}$) decreases by 13.7%, whereas that at 534.6 eV increases by 13.7%. Glass transition temperatures of control and short-time aged specimens are observed to be 95.4$^{\circ}C$ and 113.4$^{\circ}C$, which increase with the increase of aging time. TGA results indicate that the control specimens contain a smaller amount of volatile components than the short-time aged specimens.s.

Various semiconductor nanowires such as GaN, GaP, InP, Si$_3$N$_4$, SiO$_2$/Si, and SiC were coated conformally with aluminum oxide (Al$_2$O$_3$) layers by atomic layer deposition (ALD) using trimethylaluminum (TMA) and distilled water ($H_2O$) at a temperature of 20$0^{\circ}C$. Transmission electron microscopy (TEM) revealed that A1203 cylindrical shells conformally coat the semiconductor nanowires. This study suggests that the ALD of $Al_2$O$_3$ on nanowires is a promising method for preparing cylindrical dielectric shells for coaxially gated nanowire field-effect transistors.