As the semiconductor devices are miniaturized, the number of the unit cleaning processes increases. In order to processes by conventional RCA cleaning process, the consumption of volume of liquid chemical and DI water became huge. Therefore, the problem of environmental issues are evolved by the increased consumption of chemicals. To resolve this matter, an advanced cleaning process by Electrolyzed Water was studied in this work. The electrolyzed water was made by an electrolysis equipment which was composed of three chambers of anode, cathode, and middle chambers. In the case of electrolyzed water with electrolytes in the middle chamber, oxidatively acidic water of anode and reductively alkaline water of cathode were obtained. The oxidation/reduction potentials and pH of anode water and cathode water were measured to be +l000mV and 4.8, and -530mV and 6.3, respectively. The Si-wafers contaminated with metallic impurities were cleaning with the electrolyzed water. To analysis the amounts of metallic impurities on Si-water surfaces, ICP-MS(Inductively Coupled Plasma-Mass spectrometer) was introduced. From results of ICP-MS measurements, it was concluded that the ability of electrolyzed water was equivalent to that of the conventional RCA cleaning.

InSb hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at $200^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

The notching effect in etching of un doped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma, First, in the region of small line width, the potential was increased as a result of ions in the exposed surface of oxide, and the incident ions between the small line width were deflected more wide range, therefore the depth of notching was shallow and wide, Second, in the region of large line width of gate, electrons were charged on the top of photoresist and the side of gate, a part of ions deflected, The deflected ions were locally charged positive on the side of gate, and then the potential difference was produced, therefore, ions stored up more at independent line than at dense line, and nothing became deeper by Br ion bombardment.

The rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STi CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. We studied the current sensing method in STI-CMP with the reverse moat pattern.

진공 분위기에서 소성하여 ZnS 형광체를 제작하였다. ZnS 형광체는 소성온도가 $950^{\circ}C$ 이하인 경우 sphalerite 구조로 성장되었고, $1050^{\circ}C$ 이상인 경우 sphalerite 구조와 wurtize 구조의 공존이 확인되었다. Sphalerite 구조일 때 나타나는 460 nm를 중심으로 하는 발광 peak과 wurtize 구조일 때 나타나는 440 nm를 중심으로 하는 발광 peak은 ZnS 형광체 내에 형성된 $V_{Zn}$에 기인한다. Sphalerite 구조로 성장되었을 때 발광 스펙트럼에서 관측되는 528 nm를 중심으로 하는 발광 peak과 sphalerite와 wurtize 구조가 공존할 때 발광 스펙트럼에서 관측되는 515 nm를 중심으로 하는 발광 peak은 ZnS 형광체 내에 형성된 S의 결핍($V_s$) 준위로부터 가전자 띠로 복사 전이에 기인하는 것으로 설명된다.

ZnS:Cu,Cl 형광체의 여기 및 발광 스펙트럼 측정 결과 주게인 $Cl^-$ 이온과 받게인 $Cu^+$ 이온 사이의 흡수와 발광에 기인하는 peak과 국소화된 발광 중심인 $(CU_2)^{2+}$ 이온의 흡수와 발광에 기인하는 peak이 관측되었다. CuCl의 첨가량이 증가함에 따라 $Cu^+$ 이온의 농도가 증가하게 되어 $(Cu_2)^{2+}$ 이온에 기안하는 발광으로부터 공명 에너지 전달 (Resonant Energy Transfer)의 확률이 높아지기 때문에 513 nm를 중심으로 하는 발광의 세기가 증가하게 된다. 자체 제작한 ZnS:Cu,Cl 형광체를 이용하여 제작한 소자의 휘도 측정결과 400 Hz, 100 V 에서 CuCl 의 첨가량이 0.2 mole% 일 때 휘도가 최대였고, 진동수가 증가함에 따라 휘도가 포화되는 현상이 나타났다. CuCl의 첨가량이 증가함에 따라 513 nm를 중심으로 하는 발광이 강해지고 CIE 좌표값이 녹색영역으로 이동하게 된다. 진동수가 증가하면 인가된 전압의 유지 시간이 짧아지게 되어 발광의 감쇄시간이 긴 513 nm를 중심으로 하는 발광보다 감쇄시간이 짧은 458 nm를 중심으로 하는 발광이 강해지게 되고, CIE 좌표값이 청색영역으로 이동하게 된다.

In this paper, carbon and silver electrode properties of power electroluminescent device were investigated. Devices were manufactured by screen-printing and manufactured devices were measured following things with variable applied voltage; emission spectra, transferred charge density, brightness and current. A continuous test at $65 ^{\circ}C$ of temperature and 95% of humidity was operated. The brightness of devices which were made of silver and carbon electrode at 100V was $67.03cd/m^2$ and $60.02cd/m^2$ respectively. In case of device, which was made of silver electrode, a black spot was formed after 72 hours and degraded but carbon electrode was stable.

It is very important to understand the correlation of between inter layer dielectric(ILD) CMP process and various facility factors supplied to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD CMP process were studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyzed various facilities supplied at supply system. With facility shortage of D.I. water(DIW) pressure, we introduced an adding purified $N_2(PN_2)$ gas in polishing head cleaning station for increasing a cleaning effect. DIW pressure and PN2 gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. We estimated two factors (DIW pressure and PN2 gas) for the improvement of CMP process. Especially, we obtained a uniform planarity in patterned wafer and prohibited more than 90% wafer edge over-polishing. In this study, we acknowledged that facility factors supplied to equipment system played an important role in ILD-CMP process.

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.l8um semiconductor device. Through reverse moat pattern process, reduced moat density at high moat density, STI CMP process with low selectivity could be to fit polish uniformity between low moat density and high moat density. Because this reason, in-situ motor current end point detection method is not fit to the current EPD technology with the reverse moat pattern. But we use HSS without reverse moat pattern on STI CMP and take end point current sensing signal.[1] To analyze sensing signal and test extracted signal, we can to adjust wafer difference within $110{\AA}$.

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of $10^{11}\sim10^{21}$[states/eV/$cm^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}\sim10^{13}$[states/eV/$cm^2$]. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

A modified direct bonding technique employing a wet chemical deposition of $SiO_2$ film on a wafer surface to be bonded is proposed for the fabrication of Si-$SiO_2$-Si structures. Structural and electrical quality of the bonded wafers is studied. Satisfied insulating properties of interfacial $SiO_2$ layers are demonstrated. Elastic strain caused by surface morphology is investigated. The diminution of strain in the grooved structures is semi-quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region.

In this study, (Ba,Sr)$TiO_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) as a function Ar/$CF_4$ gas mixing ratio. Experiment was done by varying the etching parameters such as rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 ${\AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X -ray photoelectron spectroscopy(XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the etching. To analyze the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

In this study, Ferroelectric $Pb(Zr_x,Ti_{1-x})O_3$(x=0.53) thin films were fabricated by the spin-coating on the Pt/Ti/$SiO_2$/Si substrate using the PZT metal alkoxide solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar(20)$/Cl_2/BCl_3$ plasma. The etch rate of PZT film was 2450 ${\AA}/min$ at Ar(20)$/BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. The leakage current densities of before etching and after etching PZT thin film were $6.25\times10^{-8}A/cm^2$, $8.74\times10^{-7}A/cm^2$ with electric field of 0.07MV/em, respectively.

The $0.94MgTiO_3-0.06SrTiO_3$ ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. According to the X-ray diffraction patterns of the $0.94MgTiO_3-0.06SrTiO_3$ ceramics, the cubic $SrTiO_3$ and hexagonal $MgTiO_3$ structures were coexisted. Increasing the sintering temperature from $1325^{\circ}C$ to $1400^{\circ}C$, average grain size was increased from $5.026{\mu}m$ to $8.377{\mu}m$. In the case of the $0.94MgTiO_3-0.06SrTiO_3$ ceramics sintered at $1325^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 21.66, 2,522(at 7.34GHz), $+71ppm/^{\circ}C$, respectively.

Element distribution analysis and degradation characteristics of the ZnO varistors fabricated at the ambient sintering-process is investigated in this study. ZnO varistors made of Matsuoka's composition were fabricated by standard ceramic techniques. The ambient sintering-process is performed at the special electrical-furnace which is equipped with the vacuum system. The Gases of injection at sintering- process were oxygen, air, nitrogen and argon respectively. Element and quantitative analysis in the microstructure of ZnO varistors made use of EPMA equipment. Degradation characteristics were showed by DC degradation tests at $115{\pm}2\;^{\circ}C$ for period up to 13 h. From above analysis, it is found that at the DC degradation test the ZnO varistor sintered in oxygen atmosphere showed the excellent prop properties among them and these results could be explain by element and quantitative analysis in ZnO microstructure.

In this study, A set-up for measuring a initial permeability of soft-ferrite powder was developed with a differential transformer coil. To measure a initial permeability of magnetic powder is cumbersome since there are not any measuring equipment and method. A magnetic powder is currently used for a magnetic fluid and microwave absorber materials, and the initial permeability of the magnetic powders is very important to be evaluated a powder for some applications.

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering were investigated, The ${\beta}-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 4, 8, 12wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 97% of the theoretical density and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. But the fracture toughness showed the highest of $7.0MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest of $1.59\times10^{-3}\Omega{\cdot}cm$ for composite added with 8wt% $Al_2O_3+Y_2O_3$ additives at room temperature and is all positive temperature coefficient resistance(PTCR} against temperature up to $700^{\circ}C$.

The $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics were prepared by conventional mixed oxide method. The structural properties of the BZT ceramics with the sintering temperature were investigated by XRD, SEM. The BZT ceramics have a complex-perovskite structure. The BZT ceramics sintered at $1550^{\circ}C$ had a superstructure plane of BZT(100). Increasing the sintering temperature, the bulk density and ordering were increased. The bulk density of the BZT ceramics sintered at $1550^{\circ}C$ was $7.50[g/cm^3]$. Increasing the sintering temperature, the average grain size were increased and pore were decreased.

The post-annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},\;Ti_{0.48})O_3$) thin films($4000{\AA}$) have been investigated for a structure of PZT/Pt/Ti/Coming glass(1737). Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at $650^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were $8.1[{\mu}C/cm^2]$, 95[kV/cm] respectively. Polarization value decrease about 25% after $10^9$ cycles.

The microwave dielectric properties of complex perovskite-structured $Ba(Mg_{1/3}Ta_{2/3})O_3$ ceramics were investigated with calcining condition. The BMT ceramics were prepared by conventional mixed oxide method. Calcining conditions were $1200^{\circ}C$ for 10hr., $1300^{\circ}C$ for 2hr., and 5hr., respectively. And the specimens were sintered at $1650{\mu}m$. The structural and microwave properties of BMT ceramics were investigated by XRD, SEM and network analyzer. In the case of BMT ceramics calcined at $1300^{\circ}C$ for 5 hr., dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.26, 31,144(at 1GHz), 6.11[ppm/$^{\circ}C$], respectively.

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained at SCT15 thin film. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

We fabricated electroluminescent(EL) devices which have a blended single emitting layer containing poly(N-vinylcarbazole)[PVK] and poly(3-dodecylthiophene)[P3DoDT]. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer, between polymer emitting layer and Al electrode. All of the devices emit orange-red light and its can be explained that the energy transfer occurs from PVK to P3DoDT. In the voltage-current and voltage-light power characteristics of devices applied LiF layer, current and light power drastically increased with increasing applied voltage. In the consequence of the result, the external quantum efficiency of the devices that have a molar ratio 1:1 with LiF layer was 35 times larger than that of the device without LiF layer at 6V.

In the case of immobilizing of glucose oxidase into polypyrrole (PPy) using electrosynthesis, the glucose oxidase (GOx) forms a coordinate bond with the polymers backbone. However, because of intrinsic insulation and net-chain of the enzyme, the charge transfer and mass transport are obstructed during the film growth. Therefore, the film growth is dull. We synthesized the enzyme electrode by electropolymerization added some organic solvent. A formative seeds of film growth is delayed by adding ethanol. The delay is induced by radical transfer between ethanol and pyrrole monomer. The radical transfer shares the contribution of dopant between electrolyte anion and GOx polyanion. This may lead to increase amount of immobilized the enzyme in PPy. For the UV absorption spectra of synthetic solution before synthesis and after, in the case of ethanol added, the optical density was slightly decreased for the GOx peaks. It suggests amount of GOx in the solution was decreased and amount of GOx in the film was increased. We established qualitatively that amount of immobilization can be improved by adding a little ethanol in the synthetic solution. It is due to radical transfer reaction. The radical transfer shares the contribution of dopant between small and fast electrolyte anion and big and slow GOx polyanion.

It is well known that the state of existence of molecules on the surface of water changes during compression of the molecules. Electric methods, such as the measurement of the surface potential or displacement current, are also useful for investigating dynamic changes of the molecular state on the water surface during compression. Maxwell-Displacement-Current(MDC) measuring technique has been applied to the study of monolayers of Arachidic acid and L-$\alpha$-Dimyristoyl Phosphatidylcholine(L-$\alpha$-DMPC). The displacement current was generated from monolayers on a water surface by monolayer compression. Displacement current was generated in the gas state, gas/liquid state, and liquid state in the course of monolayer compression. The researchers examined diplacement current of electric conduction organic monolayer generated due to orient change of monolayers alkylchain.

We will illustrate the topographical structure and optical structure of the merocyanine dye LB films obtained by the scanning near-field optical/atomic force microscopy (SNOAM). SNOAM was recognized as a powerful tool to modify the surface as well as to characterize the topography of the surface at atomic resolution, especially for optical reaction materials. SNOAM images showed that the topographical and optical structures of these films were not only depended on the chemical property but also physical property. In the continuous measurement on these dyes, the appearance of near-field optical transmission images showed a certain dependence on the kinds of dyes and the mutual mixing ratios of dyes. These experimental results suggest that there is a certain kind of interaction between these two dyes.

This paper presents anisotropic ethcing characteristics of single-crystal silicon in tetramethylammonium hydroxide(TMAH):isopropyl alcohol(IPA) solutions containing pyrazine. With the addition of IPA to TMAH solutions, etching characteristics are exhibited that indicate an improvement in flatness on the etching front and a reduction in undercutting, but the etch rate on (100) silicon is decreased. The (100) silicon etch rate is improved by the addition of pyrazine. An etch rate on (100) silicon of $0.8\;{\mu}m/min$, which is faster by 13 % than a 20 wt.% solution of pure TMAH, is obtained using 20 wt.% TMAH:0.5 g/100 ml pyrazine solutions, but the etch rate on (100) silicon is decreased if more pyrazine is added. With the addition of pyrazine to a 25 wt.% TMAH solution, variations in flatness on the etching front were not observed and the undercutting ratio was reduced by 30 ~ 50 %.

The relation of crystal phase and charge/discharge capacity of $Li[Li_yMn_{2-y}]O_4$ were studied for different degrees of Li substitution (y). All cathode material showed spinel phase based on cubic phase in X-ray diffraction. Other peaks didn't show in spite of the increase of y value in $Li[Li_yMn_{2-y}]O_4$. Ununiform of $Li[Li_yMn_{2-y}]O_4$ which calcinated by (111) face and (222) face was more stable than that of pure $LiMn_2O_4$. In addition, At TG analysis, calcined $Li[Li_{0.1}Mn_{1.9}]O_4$ exhibited much mass loss at $800{\mu}m$. The cycle performance of the $Li(Li_yMn_{2-y}]O_4$ was improved by the substitution of $Li^{1+}$ for $Mn^{3+}$ in the octahedral sites. Specially, $Li[Li_{0.08}Mn_{1.92}]O_4$ and $Li[Li_{0.1}Mn_{1.9}]O_4$ cathode materials showed the charge and discharge capacity of about 125mAh/g at first cycle, and about 95mAh/g after 70th cycle. It is excellent than that of pure $LiMn_2O_4$, which 125mAh/g at first cycle, 65mAh/g at 70th.

An ozone condenser by a selective adsorption on the silica gel surface is constructed. Ozone density is evaluated by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is found to be available to the density evaluation from dilute to highly condensed ozone. The highest ozone density condensed by the adsorption method is evaluated to be 97 mol%.

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point, the passivation potential (PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

The optical characteristics of merocyanine dyes have been investigated widely due to their possible application to the high efficiency photo-electric devices. The optical systems are mostly fabricated using vacuum evaporation. casting and Langmuir-Blodgett method and the arrangement and orientation of dye molecules is one of the most important factors in the study on the optical characteristics. In this study. we fabricated the molecular systems through the LB techniques and investigated the optical characteristics of merocyanine dye LB film using the oscillation characteristics of quartz crystal. It was quite interesting behavior that the resistance and frequency shift at the parallel resonance under the UV irradiation.

The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$nd annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

Displacement current was generated in the light stimulus. Solution of azobenzene molecules (8A5H) have to character trans-to-cis. The Maxwell displacement current measuring technique has been applied for the investigation of azobenzene organic thin films under alternating photoirradiation with ultraviolet($\lambda_1$) and visible($\lambda_2$) light. also, As laser beam(630~670nm) investigate light response. As result, ultraviolet($\lambda_1$) and visible($\lambda_2$) light see photoisomerization response, but laser beam not appear photoisomerization in current that differ wave range reagent.

We studied effects of alkyl($C_nH_{2n+1}$) chain length on characteristics of poly(3-alkylthiophene) electroluminescent diodes. Among the poly(3-alkylthiophene), poly(3-hexylthiophene)(n=6) and poly(3- octyIthiophene)(n=8) were mainly used for the emitting layer of the diode. The result of experiment, the emission intensity of poly(3-alkylthiophene) electroluminescent diodes depends on the alkyl chain length. Strong emission is obtained from a poly(3-alkylthiophene) diodes of long alkyl side chain length. Emission intensities are enhanced by a confinement of carriers on a main chain with a long interchain distance caused by a long alkyl side chain.

This paper presents the electrochemical etch-stop characteristics of single-crystal silicon in a tetramethyl ammonium hyciroxide(TMAH):isopropyl alcohol(IPA):pyrazine solution. Addition of pyrazine to a TMAH:IPA etchant increases the etch-rate of (100) silicon, thus the elapsed time for etch-stop was shortened. The current-voltage(I-V) characteristics of n- and p-type silicon in a TMAH:IPA:pyrazine solution were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type silicon, respectively, were obtained and applied potential was selected between n- and p-type silicon PP. The electrochemical etch-stop is applied to the fabrication of 801 microdiaphragms having $20\;{\mu}m$ thickness on a 5-inch silicon wafer. The averge thicknesses of 801 microdiaphragms fabricated on the one wafer were $20.03\;{\mu}m$ and standard deviation was ${\pm}0.26{\mu}m$. The silicon surface of the etch-stopped microdiaphragm was extremely flat without noticeable taper or other nonuniformities. The benefits of the electrochemical etch-stop in a TMAH:IPA:pyrazine solution become apparent when reproducibility in the microdiaphragm thickness for mass production is considered. These results indicate that the electrochemical etch-stop in a TMAH:IPA:pyrazine solution provides a powerful and versatile alternative process for fabricating high-yield silicon microdiaphragms.

Bi-thin films are fabricated by an ion beam sputtering, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

Vanadate glass in the $Li_2O-P_2O_5-V_2O_5$ system with 60mol% $V_2O_5$ was prepared by melting the bath in pt. crucible followed by quenching on the copper plate. We found that $Li_2O-P_2O_5-V_2O_5$ glass ceramics obtained from nucleation of $Li_2O-P_2O_5-V_2O_5$ glass showed significantly higher capacity and longer cycle life than conventionally made crystalline $LiV_3O_8$. In the present paper, We describe the charge/discharge properties during crystallization process and find the best crystallization condition of $Li_2O-P_2O_5-V_2O_5$ glass as cathode material. The Charge and discharge capacity of $Li_2O-P_2O_5-V_2O_5$ glass was about 220mAh/g for the cell heat-treated at $250^{\circ}C$ for 2.5hr.

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes. but also as precursors of multilayer systems promising many technical applications. They exhibit very interesting physico-chemical properties as two-dimensional and interfacial systems. Until now. many potential methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers.

This paper investigated that resonant frequencies of microstrip patch antenna were tunable when piezoelectric materals were used as the antenna substrates. The resonant frequencies of the air-gap antenna using the piezoelectric substrate were able to be controlled by applied AC voltage. The frequency variation of the antenn was great when PZT were applied voltage of the resonant frequency.

Underwater acoustic communications have made considerable advances in the past decade. The purpose of this paper is to achieve the underwater communication by ultrasonic sensors and to investigate conditions of good underwater acoustic communicators. As a result of this experiments, the ultrasonic sensors, MA40E7R/S, made by Nicera can be used as ultrasonic transducers for underwater communication using AM(Amplitude Modulation) signal and Transmission Loss is 17.328[dB] at 65[cm]. To make a good underwater communicator, proper diameter of disk PZT transduers is the one of most important factors, because radiation of acoustic wave depends on proper diameter of transduers and the transmission loss strongly depends on the spreading loss.

The crimping connection is a permanent connection that maintains mechanical and electrical property for a long time by crimping two conductors. In this paper, we have done a basic study to decide normal or abnormal condition depending on crimping. Using PZT piezo-sensor, we have analyzed crimping waveforms according to the crimping height. And hence the normal or abnormal condition of crimping connections in real time could be decided by comparison of crimping waveforms in the cases of normal crimping, over crimping, under crimping and core omitting.

In the recognition of the gases using the quartz crystal microbalance (QCM) coated with the film materials, it is important to obtain the recognition ability of gases, and the stability of film coated above the QCM. Especially, the thickness of film coated above the QCM is decreased according with the using circumstance and time of QCM gas sensor. Therefore, the sensing chararcteristics of film is changed with these. In this paper, we coated the lipid PC (Phosphatidyl Choline) materials varing with the blended amount of PVC(Poly Vinyl Chloride) and solution (Tetra Hydrofan:THF) above QCM to obtain the stability of lipid PC film. QCM gas sensors coated with film materials were measured the frequency change in the chamber of stationary gas sensing system injected 1-hexane, ethyl acetate, ethanol and benzene of $20{\mu}{\ell}$, respectively. We obtained the principal component analysis (PCA) from the frequency change due to the absorption of gas. Also, we measured the degradation characteristics of QCM gas sensor to show the properties of stability.

Beginning with a brief introduction on near 100 nm or below CMOS devices, this paper addresses novel devices for future sub-100 nm CMOS. First, key issues such as gate materials, gate dielectric, source/drain, and channel in Si bulk CMOS devices are considered. CMOS devices with different channel doping and structure are introduced by explaining a figure of merit. Finally, novel device structures such as SOI, SiGe, and double-gate devices will be discussed for possible candidates for sub-100 nm CMOS.