EEPROM technology has been used for storing analog weights as charge in a nitride layer between gate and channel of a field effect transistor. In the view of integrity and fabrication process, it is essentially required that SONOSFET is capable of performing synapse function as a basic element in an artificial neural networks. This work has introduced the VLSI implementation for synapses including current study and also investigated physical characteristics to implement synapse circuit using SONOSFET memories. Simulation results are shown in this work. It is proposed that multiplication of synapse element using SONOSFET memories will be developed more compact implementation under Present fabrication processes.

As optical massmemories, (Se, S)-based chalcogenide amorphous films are used for a holographic supermicrofiche by using the refractive-index change. In 1000$\AA$thick-As$_{40}$ Ge$_{10}$Se$_{100-x}$S$_{x}$(x=0.25, 35at.%), the amount of refractive index change $\Delta$n reaches 0.01~0.53 at 6328, 7800$\AA$ by exposing for 15minutes plue-pass filtered mercury lamp(~4300$\AA$) and annealing 20$0^{\circ}C$. And in initially annealed As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$, photodarkening(PD) and thermalbleaching(TB) was founded.ded.B) was founded.d.

AlGaAs/GaAs Heterojunotion Bipolar Transistors (HBTs) with various emitter areas were fabricated and the device size dependence on the current gain was examined. With the different emitter areas, the passivated devices having the same peripheral length were fabricated and measured. The measured base current density in the Gummel plots shows an ideality factor of nearly 2. It is found that as the emitter area becomes small, the base current density with the ideality factor of 2 increases linearly, and as the emitter perimeter/area ratio becomes large, the surface recombination current density component increases. The current gain performance in AlGaAs/GaAs HBTs is mainly determined by either the larger emitter area or the smaller ratio of the emitter perimeter to the emitter area. These results will be compared with experimental works for GaInP/GaAs HBTs

Superthin ONO ( oxide -nitride - oxide ) structures were fabricated for the MONOS nonvolatile memory device with a 20$\AA$ tunneling oxide, 40$\AA$ nitride and 40$\AA$ blocking oxide. The compositions of each layer in a superthin ONO structure were investigated. Also, the characteristics of trap related to the memory quality were examined.

SiO 7f the SiO/TiN film is used as the insulating layer and TiN film is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it\`s relatively low specific resistance. In this study we investigated it\`s electrical and optical characteristics to determine refractive index, absorption coefficient and Permittivity. The films are differently fabricated in thickness method for this experiment.

In this paper aims at studying the minimal test pattem of the RAM. This also propose a scheme of testing faults from the new fault model using the LLB. The length of test patterns are 6N(1-wsf), 9.5N(2-wsf), 7N(3-wsfl, 3N(4-wsf) operations in N-bit RAM. This test techniques can write into memory cell the number of write operations is reduced and then much testing time is saved. A test set which detects all positive-negative static t-ws faults for t=0, 1, 2, 3, 4 and detects all pattern sensitive fault in memory array. A new fault model, which encompasses the existing fault model Is proposed.

A high power SiGe HBT has been fabricated using APCVD(Atmospheric Pressure Chemical Vapor Deposition) and its perfermanoe has been analysed. The composition of Ge in the SiGe base was graded from 0% at the emitter-base junction to 20% at the base-collector junction. As a base electrode, titanium disilicide(TiSi$_2$) was used to reduce the extrinsic base resistance. The SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0GHz and a maximun oscillation frequency(f$_{max}$) of 16.1GHz with a pad de-embedding. The packaged high power SiGe HBT with an emitter area of 2xBx80${\mu}{\textrm}{m}$$^2$typically shows a cutoff frequency of 4.7GHz and a maximun oscillation frequency of 7.1GHz at Ic of 115mA.A.A.

AlGaAs/GaAs 에피 구조와 제조 공정에 사용될 마스크를 설계 및 제작하여, 이를 이용하여 다양한 크기의 HBT를 제작하였다. 제작될 소자의 특성에 영향 을 미치는 공정에 대해서는 단위 공정을 수행하여 발생될 수 있는 문제점들을 사전에 제거하고, 안정된 공정 조건을 확립하도록 하였다. 금속의 저항성 접촉특성 향상을 위한 단위 실험 결과, n형 및 p형 금속에 대하여 각각 3.5$\times$$10^{-6}$-$ extrm{cm}^2$와 1.0$\times$$10^{-5}$$\Omega$-$\textrm{cm}^2$의 접촉 비저항 특성을 얻었다. 또한, 제작된 HBT는 HP4145B 와 HP8510C의 장비를 이용하여 DC 및 AC 특성을 측정하였는데, 에미터 크기가 3$\times$10um$^2$인 소자의 경우, $\beta$=51, f$_{T}$= 42GHZ 및 f$_{max}$=19GHz의 특성을 얻었다.

AIN thin films were prepared using by Rf sputtering method on the GaAs(170) substrate and investigated by X-ray diffractometer, IR spectroscopy, n&k system. The parameters were the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio. The AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. The crystallinity of the films, which were grown respectively under the different conditions, were determined by the comparison of the band width of an E$_1$[TO:680$cm^{-1}$ /] phonon mode. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.% according to the increment of the $N_2$/Ar ratio by which the sputter yield got lower.

A hydride vapor phase epitaxy (HVPE) method was performed to prepare the GaN thick-films on c-plane sapphire substrates. The full-width at half maximum of double crystal X-ray rocking curve from 350${\mu}{\textrm}{m}$ thick GaN was 576 arcsecond. The photo- luminescence spectrum measured (at room temperature) show the narrow bound exciton(I$_2$) line and weak donor-acceptor pair recombination peak, however, there was not observed deep donor-acceptor pare recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality.

Substrates of SAW filter are mainly single crystal such as LiNbO$_3$, LiTaO$_3$. However, fabrication of crystal is difficult and cost is very high. In this study, crystal was substituted for piezoelectric ceramics which has simple fabrication process. The same SAW filter mask was photolithographed on crystal(LiNbO$_3$) substrate and ceramic(PZT4, PZT5A and PZT8) substrate in order to compare experimental value with theoretical value. The difference of center frequency was only 3.7%. PZT8 showed good bandwidth properties. It is considered that PZT8 has higher mechanical quality factor and propagation velocity than PZT4, PTT5A.

We have investigated the influence of Ti/Ba mole ratio in the characteristics of the modified BaTiO$_3$systems with Ca addition. The specimens were fabricated with variations in Ti/Ba mole ratio between 0.995 and 1.01, and sintered in the temperature range between 13$25^{\circ}C$ and 1375$^{\circ}C$. The room temperature resistivity, PTCR effect and ac complex impedence characteristics were studied. It shows that the room temperature resistivity was increased with the increasing Ti/Ba mole ratio and sintering temperature. It was suggested that this result was mainly attributed to its grain-boundary properties

Crystal structures of N $a_{x}$W $O_3$(0.5$\leq$x$\leq$1.0) were investigated. Transmission electron microscopy (TEM) studies indicate that there is an ordering of sodium ions when x=0.75. The direction of ordering is [110] and the wavelength of ordering is twice of the interplanar distance of (110) plane. It has been confirmed that a superlattice containing eight N $a_{0.75}$W $O_3$is the unit cell of ordered structure. In this unit cell, Na sites at (100) and ($\frac{1}{2}$$\frac{1}{2}$$\frac{1}{2}$) are vacant. The ordered phase was preserved after the annealing at $600^{\circ}C$ in the air. In reduced N $a_{x}$W $O_3$with x=0.5 and 1.0, extra phases were found to coexist with the partially ordered perovskite phase. After annealing at $600^{\circ}C$, theses phases were transformed into the phases found in calcined specimens.ens.s.

In this paper, the structure, dieletric and piezoelectric properties of Pb(Fe$_{\frac{1}{2}}$/Sb$_{\frac{1}{2}}$$O_3$+ Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$system ceramics were investigated and the effects of donor Nb$^{+5}$ on these properties were characterized for the application of the actuator. In xPb(Fe$_{\frac{1}{2}}$Sb$_{\frac{1}{2}}$)O$_3$+ (1-x) Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$system ceramics, tetragonality decreased as x and Nb$_2$O$_{5}$ wt% were increased. In 0.05Pb(Fe$_{\frac{1}{2}}$Sb$_{\frac{1}{2}$}$)O$_3$+ 0.95 Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$system, grain size was smallest but showed best dielectric and piezoelectric properties. The specimen sintered at 120$0^{\circ}C$ in 0.05pb(Fe$_{\frac{1}{2}}$Sb$_{\frac{1}{2}}$ )O$_3$+ 0.95 Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$+ Nb$_2$O$_{5}$ 0.6wt% exihibited best piezoeletric properties such as $K^{p}$ =64%, d$_{33}$ =490 [$\times$10$^{-12}$ C/N] and strain was 1320[$\times$10$^{-6}$ Δ$\ell$/$\ell$]at AC 6kV/cm

The effect of NiO addition on the microstructure and microwave dielectric properties of (Zr$_{0.8}$Sn$_{0.2}$)TiO$_4$(ZST) was investigated. With the NiO addition, a dense ZST body of density higher than 95% has been achieved in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be NiTiO$_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_{f}$decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in term of the second phase. The ZST ceramics with small amount of additive gave $\varepsilon$$_{r}$=38, Q=7000 at 7 GHz and TC$_{f}$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by previous investigation.stigation.

The method for calculation of $Y_2$BaCuO$_{5}$ contents was set up. It was estimated that the optimum value of 211 contents in the textured YBCO superconductor as flux pinning center was about 20wt.%. Ag contents have no influence on the critical temperature, but have large influence on the critical current density of the textured YBCO. When Ag contents over 15wt.%, which was the solubility of condensed YBCO, the critical current densities tend to a stable value.e.

In this paper, the three-dimensional stress effect of thermal oxide is simulated. We developed the three-dimensional finite element numerical simulator including three-dimensional adaptive mesh generator that is able to refine and eliminate nearby moving boundary of oxide, and oxidation solver with stress model. The main effect of deformation at the coner area of oxide is due to distribution of oxidant, but the deformation of oxide is affected by the stress in the oxide. In the island structure which is the structure mostly covered with nitride and a coner is opened to oxidation, oxidation is reduced at the coner by compressive stress. In the hole structure which is the structure mostly opened to oxide and a coner is covered with nitride, however, oxidation is increased at the coner by tensile stress.

Ta$_2$O$_{5}$ film ale recognized as promising capacitor dielectric for future DRAM\`s. The electrical properties of Ta$_2$O$_{5}$films greatly depend on the heating condition. In the practical fabrication process, several annealing process, such as the annealing of Al in H$_2$(about 40$0^{\circ}C$) and reflow of BPSG (borophosphosilicate glass) film in $N_2$(about 80$0^{\circ}C$), exist after deposition of Ta$_2$O$_{5}$ film. In this paper, we describe the temperature effect on the electrical properties of W/Ta$_2$O$_{5}$/Si structure. The thin film of Ta$_2$O$_{5}$ and tungsten have been deposited on p-si(100) wafer using the sputtering system. The heating temperature was varied from 500 to 90$0^{\circ}C$ in $N_2$for 30min and The degree of temperature is 100\`C. In a log(J/E$^2$) Vs 1/E plot of typical I-V data, we find a linear relationship for the temperature of 500, $600^{\circ}C$ and as deposition. This could indicate Fowler-Nordheim tunneling as the dominant mode of current transports. However, we can not find a linear relationship for the temperature above $700^{\circ}C$. This could not indicate Fowler-Nordheim tunneling as the dominant mode of current transport. The high frequency (1MHz) capacitance-voltage (C-V) of W/Ta$_2$O$_{5}$/Si Capacitor were investigated on the basis of shift in the threshold voltage and dielectric constant. The magnitude of the threshold voltage and dielectric constant depends on the heating temperature, and increases with heating temperature.temperature.

The deposition condition Gf TiN films as electrode was studied by sheet resistance, TiN depositon Thickness X-ray diffraction. TiN was made by reactively DC magnetron sputtering with varying $N_2$/Ar mixture gas and substrate temperature. After finding The deposition condition of TiN films, The samples with the structure of Cu/Ta$_2$O$_{5}$, TiN/Ta$_2$O$_{5}$Si, Cu/TiN/Ta$_2$O$_{5}$ Si were prepared and were measured I-V, C-V. As a results, it was found that when TiN was deposited in an $N_2$a results, it was found that when TiN was deposited in an $N_2$atmosphere its Sheet resistance is lower n than n V$_2$Ar mixtureixture

We fabricated SrTiO$_3$thin film capacitor on the Ag/Si-wafer by RF sputtering deposition. And I-V characteristics and structual analysis of the thin film capacitor are investigated. We found that the leakage current of the films during deposition is strongly denpent on the ambient gas and substrate temperature. Because of increase of activation energy, leakage current increased at high temperature and resistivity of the films was decreased. According to the increase of oxygen gas flow rate, the conductivity of thin film capacitor was increased and leakage current was decreased.

It is considered that the effect of radiation aging, such as electron beam due to the ultra-high voltage for transmission, on the physical properties and electrical characteristics of electrital insulating materials. Low-density polyethylene(thickness 100[${\mu}{\textrm}{m}$]) is selected as an experimental specimen. Fourier transform infra-red spectrum, X-ray diffraction, differential scanning calorimetry and scanning electron microscopy is used so as to analysis the physical properties, the morphological changes and the crystallinity of LDPE. And it is made an experiments of dielectric characteristics in the temperature range of 20[$^{\circ}C$]~120[$^{\circ}C$], in the frequency range of 30[Hz]~1.5$\times$10$^{5}$ [Hz] and in the applied voltage range of 300[mV]~1500[mV].

A method is presented for the development of the PC-based measurement system on the 6 cathodes-single anode type multi-functional oxygen electrodes for detecting various components of the solution by measuring the dissolved oxygen(DO) concentration. The system is consisted with the 6 channel sensor signal modyfing circuits for the sensor and the PC interface circuits using the single chip microprocessor 80c196kc. Typical polarograms for the DO probes under test using this sensor circuits are presented. This system covers wide range of measuring time from 300sec to over 16 hour in one measurement step by programming the 9 monitor disply mode.

In this paper, we mention the study on the sensing function of amorphous magneto- striction wire with about 125${\mu}{\textrm}{m}$$\Phi$ in diameter. The wire in fabricated by using injection and quenching method under the high speed rotating water flow. The wire\`s compotion is (Fe$_{75}$ $Co_{25}$)$_{77}$Si$_{8}$B$_{15}$ , and generates sharp Matteucci voltage by large Barkhausen jump effect even the weak magnetic field. In this study, we don\`t use pick-up coil. Instead, we apply external magnetic field of 3.6Oe in the direction orthogonal to the wire. Then, we detect Matteucci voltage of 1.lmV to both side of 20cm amorphous-wire. Thus, we find that the fabricated wire has the function necessary as the high sensitive sensor material.l.al.l.

We developed three dimensional Monte carlo ion implantation simulator which simulate distributions of impurities under the ion implantation on the tilted multi-layered layer. Our simulation reveals three dimensional shadow effect and sidewall scattering effect due to the geometrical shapes. For the evaluation of the developed three dimensional Monte carlo ion implantation simulator, calculations with 100,000 ions have been performed for the island and hole structures with a thin oxide of 100$\AA$ and nitride of 2000$\AA$. The simulation results showed that the distribution of ion decreases near the conner of the hole structure covered with a nitride layer and increases near the conner for the island structure open to oxide. Moreover, three dimensional distributions of ions were obtained with varying incident energy, tilt and rotation angle, mask depth and three-dimensional structure geometry.

In this paper, 3-terminal EMI filter for communication was studied. EMI filter for communication combining Ferrite bead with 3-terminal capacitor was constructed with T-type. We was able to control resonance frequency with chip capacitor value and attenuation characteristics by Ferrite bead properties.

A new detecting system for moving objects of coastal region has been designed by directional antenna and driving circuits. The designed system has been investigated by CAD for linear and planar antenna arrays of various radiating elements for antenna simulations and by P-spice of device simulations. For detecting the displacement of moving objects, we constructed four wideband dipole antenna, diode switching circuit, mixer, filter and amplifier. The results of antenna receiver were shown a possibility of distance measuring system through phase difference of radiation patterns in antenna simulation

The positive active material for polymer film battery was prepared by using Polyphenylenediamine(PPD) synthesized in our lab. and 2.5-dimercapto-1, 3, 4-thiadiazole(DMcT) in various mixture ratio. The transference measurement of surface morphology and thermal stability of prepared composite film was carried out by using SEM and TGA, respectively. Electrocyhemical property and electrical conductivity of composite film were also measured by using cyclic voltammetry and four-probe method in dry box, respectively. The thermal stability of prepared composite film is more than 20$0^{\circ}C$. The electrical conductivity of composite film increased and showed the highest value(about 3 S/cm)when doped at 0.4% LiClO$_4$solution. And we could confirm that DMcT effect on reactiviation of PPD through cyclic voltammogram.

The purpose of this study is to research and develop solid polymer electrolyte(SPE) for all-stolid-state lithium battery. We investigated conductivity, electrochemical properites and impedence spectroscopy of poly(ethylene oxide)[PEO]/poly(vinylidene fluoride)[PVOF] blend electrolytes and charge/discharge cycling of LiCoO$_2$/SPE/Li cell. By adding PVDF and plasticizer to PEO-LICIO$_4$electrolyte, its condustivity was higher than that of PEO-LiCIO$_4$electrolyte. Also PEO$_4$PVDF$_4$LiClO$_4$PC$_{5}$EC$_{5}$ remains stable up to 4.4V vs Li/Li. The discharge capacity of the LiCoO$_2$composite cathode was 92mAh/g based on LiCoO$_2$.EX>.

The drain current of the MOSFET in the off state(i.e., Id when Vgs=0V) is undesired but nevertheless important leakage current device parameter in many digital CMOS IC applications (including DRAMs, SRAMs, dynamic logic circuits, and portable systems). The standby power consumed by devices in the off state have added to the total power consumed by the IC, increasing heat dissipation problems in the chip. In this paper, hot-carrier-induced degra- dation and gate-induced-drain-leakage curr- ent under worse case in P-MOSFET\`s have been studied. First of all, the degradation of gate-induced- drain-leakage current due to electron/hole trapping and surface electric field in off state MOSFET\`s which has appeared as an additional constraint in scaling down p-MOSFET\`s. The GIDL current in p-MOSFET\`s was decreased by hot-electron stressing, because the trapped charge were decreased surface-electric-field. But the GIDL current in n-MOS77T\`s under worse case was increased.

In this paper, It is tested by spraying the spoiled liquids on the materials to prove the process of tracking under the various environments. Our experiments ware examined by setting the materials in the spray chamber, and by spraying the distilled water(DW), the city water(CW), the underground water(UW), the artificial acid rain(AR) and the salt water(SW) in applied voltage 3-6[KV]. As the result, the time of tracking breakdown became shorter in the order of DW < CW < UW < AR < SW. XLPE was eroded and its anti-bracking property was very strong, but that of PVC sheath was week. Especially it was confirmed that spraying by AR and SW on the PVC sheath had a serious effect on the lifetime of cable by the tracking breakdown.

It is well known that the metallo- phthalocyanine (MPcs) are sensitive to toxic gaseous molecules such as NO$_2$and also chemically and thermally stable. Therefore, lots of MPcs have been studied for the potential chemical sensor for NO$_2$gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, thin films of octa(2-ethylhexyloxy) copper-phthalocyanine were prepared by Langmuir -Blodgett method and characterized by using UV-VIS spectroscopy and ellipsometry. Transfer condition, and characterization of LB films were investigated and preliminary results of current-voltage(I-V) characteristics of these films exposed to NO$_2$gas as a function of film thickness, temperature and temperature were discussed.

This paper deals with the fabrication of 4 poles anisotropic Sr·ferrite plastic magnets. After Polyamide6 and polyamlde12 are kneaded respectively with Sr·ferrite powder, silane coupling and calcium stearate of lwt% are added for coating and pelleting. The pelleted specimen are injection-moulded under the magnetic field using 4 poles mould. For 4 poles anisotropic Sr·ferrite plastic magnets with polyamide6 as a binder, the surface magnetic flux density distribution is +943.8∼-943.87kG and the deviation is 5.2%, where as with polyamide12, the distribution is +1040.9∼-1040.9kG and the deviation is 5.4%. It shows that both of the magnet distributions are stable. As the results of the experiments, we find 4 poles anisotropic Sr·ferrite magnets have good properties as the materials appropriate for manufacturing magnet type synchronous motors.

In this study, the thermal and optical properties of multicomponent glass optical fiber by adding heavy metal oxide Ga$_2$O$_3$were investigated. The fiber samples were made by rod in tube method. The optical loss of fiber was measured in 0.3~1.8${\mu}{\textrm}{m}$ wavelength region. As Ga$_2$O$_3$increased up to 20wt%, the transition and softening temperature of bulk glass were increased from 495$^{\circ}C$ to 579$^{\circ}C$ and from 548$^{\circ}C$ to 641$^{\circ}C$respectively. Whereas the thermal expansion coefficient was decreased from 102 to 79.1$\times$10$^{-7}$ $^{\circ}C$. The refractive index was increased from 1.621 to 1.665, and IR cut-off wavelength was enlarged from 4.64${\mu}{\textrm}{m}$ to 6.1${\mu}{\textrm}{m}$. The optical loss of fiber was decreased and more remarkably decreased in 1.146${\mu}{\textrm}{m}$~1.8${\mu}{\textrm}{m}$ wavelength region.

A wide angle propagation techinque is formulated through an expansion of the Holmholtz operator followed by a Pade expansion and factorization of the resulting polynomials. Its accuracy is checked through the successful modeling of integrated waveguide turning mirrors, indicating that 6-th order polynomial can handle as large as 55$^{\circ}$tilt angle very accurately.

X/40/60 PLZT thin films were prepared by sol-gel processing and annealed by rapid thermal annealing(RTA). X/40/60 PLZT thin films were crystallized at 75$0^{\circ}C$ for 5min by RTA. Hysteresis curves were narrowed and coercive field was decreased from 50kV/cm to 31.2 kV/cm and remnant polarization was also decreased from 14.3$\mu$C/$\textrm{cm}^2$ to 6.72$\mu$C/$\textrm{cm}^2$ as La mol% increased. Dielectric constanat and optical transmittance were increased with increasing La mol%.

In (GeTe)$_{100-x}$(Sb$_2$Te$_3$)$_{x}$(x=33.5, 50, 66.5, 80 at.%) thin films, the optical properties of amorphous and crystalline thin film, XRD were studied. Also, the application for the phase change optical recording materials with the high stability and rapid erasing ability were studied. In the (GeTe)$_{100-x}$(Sb$_2$Te$_{3}$)$_{x}$ the transmittance was decreased with the increase of x. In all thin films, the transmittance was decreased and the reflectance was increased by annealing and particularly, the reflectance before and after annealing showed the large reflectance ratio. The XRD pattern, it was confined that these change of optical properties was due to the crystallization of amorphous thin films. The reflectance change was investigated using isothermal annealing condition.ion.ion.

Brewster angle microscopy(BAM) makes it possible to observe the monolayer states on the water subphase and the phase transitions from a gaseous phase via a expanded phase to a condensed phase. Also BAM can be used to observe the films on the solid substrate such as Langmuir-Blodgett(LB) films. In this Paper Polyamic Acid Alkylamine Salts(PAAS) was used for forming L films and LB films and $\pi$-A isotherm showed pressure of each phase. We obtained BAM images as surface pressure increased. Images of LB films were compared with data from ellipsometry which was used to measure the film thickness. Images of both L films and LB films were analyzed with computer in the point of brightness.

Platinum thin films were deposited on $Al_2$O$_3$substrate by DC magnetron sputtering for RTD(Resistance Thermometer Devices) temperature sensors. We made Pt resistance pattern on $Al_2$O$_3$substrate by lift-off method and fabricated Pt-RTD temperature sensors by using W-wire, silver epoxy and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$, we investigated TCR(temperature coefficient of resistance) and resistance ratio of Pt-RTD temperature sensors. TCR values were increased with increasing the annealing temperature, time and the thickness of Pt thin films. Resistance values were varied lineally within the range of measurement temperature. At annealing temperature of 100$0^{\circ}C$, annealing time of 240min and thin film thickness of 1${\mu}{\textrm}{m}$, we obtained Pt-RDT TCR value of 3825ppm/$^{\circ}C$ closed to the Pt bulk value.

Detection of displacement current across spreading organic Azodyes was investigated using a displacement current measuring technique. It was found that displacement current was generated only when dynamical motion of organic monolayers was initiated on the water surface by photo-isomerization and application of surface pressure. Displacement current was generated only in the range before the initial rise of Surface pressures for azo dyes(8A5H) we are using the Langmuir-Blodgett(LB) films deposition apparatus. We are obtain displacement current by pressure and light

To develope output characteristics of GaAs MESFET, which utilized in high frequency ranges, $Al_{0.2}$Ga$_{0.8}$As/GaAs layer was used. In this case, to minimize effects of deep-level in $Al_{0.2}$Ga$_{0.8}$As/GaAs layer, aluminium mole fraction was design to 0.2. HP 4145B was used in measurement, I$_{dss}$ was 25mA when V$_{G}$=0. Maximum transconductance was 168.75mS/mm, electron mobility was 3750 $\textrm{cm}^2$/V-s, therefore, it must be suitable for active device in MMIC. Also, Ideality factor was 1.26, which was similar to that of ideal schottky diode.

The relation between crystallinity and thermal history in low density polyethylene thin films and their effect on electric conduction phenomena and dielectric breakdown was studied. The low density polythylene thin films obtained by the solution growth method heat-treated at 140[$^{\circ}C$] for 2 h and subsequently cooling to various ways. The degree of crystallinity was estimated by the X-ray diffraction measurement for the specimen of slowly cooling, ICE quenching and liquid nitrogen quenching. The result shows that the crystallinity decreases become faster as the cooling speed increased, and that conduction phenomenon is governed by the space charge limited current in high field. It was found that the dielectric breakdown field increases with an increase in cooling speed and test number in self-healing breakdown method.

In this paper, the electron transport characteristic in CF$_4$has been analysed over the E/N range 1~300(Td) by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The alteration of cross sections from the literature is avoided as much as possible in the analysis. The motion has been calculated to give swarm parameters for the electron drift velocity(W), diffusion coefficient(D$_{L}$), the ratio of the diffusion coefficient to the mobility(D$_{L}$/$\mu$), mean energy($\varepsilon$), the electron energy distribution function. The electron energy distribution function has been analysed in CF$_4$at E/N=50, 100 and 200(Td) for a case of the equilibrium region in the mean electron energy. The results of Boltzmann equation and Monte Carlo simulation have been compared with experimental data by Y. Nakamura and M. Hayashi.shi.

Ferroelectric SrBi$_2$Ta$_2$$O_{9}$ thin films were fabricated by tole Sol-Gel method using a spin-on coating with MOD(Metal Organic Dccomposition) solution on Pt/Ti/SiO$_2$/Si(100) substratcs. The films were anncalcd at 80$0^{\circ}C$ for one hour in oxygen atmosphere. The effects of Bi/Ti mole ratios on crystalline orientations, surface morphologies, and subface composition SBT thin films with a Bi/Ta mole ratios from 1.1 to 1.3 were investigated using X-ray Diffractometry (XRD). Atomic Force (AFM), X-Ray Photoelectron Spectroscopy(XPS). Ferroelectric properties of these films were also measured.d.

In this study, we have investigated the characteristics of the response time and the viewing angle on twisted nematic (TN)-liquid crystal display (LCD) and amorphous (a) TN-LCD without rubbing. To measure the transmission-voltage, response time, and viewing angle characteristics, we prepared three kinds of LC cells and then studied the surface liquid crystal alignment effect. We studied that the response time on a-TN-LCD is fast compared to the TN-LCD. We suggest that the weak anchoring strength is attributed to the fast response time on a-TN-LCD. Also, we obtained the uniform viewing angle characteristics on a-TN-LCD. From these results, we consider that the liquid crystal alignment on LCD device are very important factor for electro-optical characteristics.

BaTiO$_3$thin films were deposited on Pt/SiO$_2$/Si substrates by RF sputtering technique. The structural and crystallographic properties were studied with deposition conditions and annealing temperatures. Deposition rates and structural properties of BaTiO$_3$thin films were investigated by the SEM, XRD and AFM. The thickness of BaTiO$_3$thin films deposited with optimized conditions was 5200[$\AA$]. The grain size was found to increase remarkably with increasing sputtering power and independent on the sputtering pressure.

Conducting polymers have band structures similar to those of inorganic semiconductors such as silicon. Several electronic devices have been constructed with conjugated polymers, mainly Schottky diodes and Metal-Insulator-Semiconductor Field-Effect Transistors (MISFET's). Organic semiconductor has been reported as active materials in MISFET's.$^{1.4}$ In our laboratory, $\alpha$-Sexithiencyl ($\alpha$-6T) has been synthesized and purified by sublimation method. In this study, thin films of $\alpha$-Sexithienyl were prepared on various substrates in ultra-high vacuum chamber by vacuum evaporation method, so called OMBD(Organic Molocular Beam Deposition).$^{7.9}$ The $\alpha$-Sexithienyl thin films were deposited with various deposition conditions. The crystalline structure, and molecular orientation of these films have being studied by using UV/Vis. spectroscopy and X-Ray Diffractometry.

Maxwell displacement current clearly shows the onset of a first order phase transition from gaseous to gaseous-fluid phase, and polar ordering of liquid molecules in the solid phase coexisting with fluid. For further monolayer compression in the fluid/solid phase transition, the condensation of domains was suggested.

In conducting systems based on LB films, TCNQ derivatives have been extensively studied as electron acceptor molecules. We have investigated the optical, electrical, and magnetic properties of Viologen-(TCNQ￣)$_2$LB films. In UV/visible absorption measurements, we have observed TCNQ￣ peak at 380 nm and dimer peak at 620 nm. The electron spin resonance measurements infer that Viologen-(TCNQ￣)$_2$LB film exhibits anisotropic properly. In other words, the LB film shows angular dependence. Iodine doping affects the degree of charge transfer and the conductivity of the films. The UV/visible absorption spectra of the LB film doped with I$_2$show peaks at near 400~430 nm and there is no dimer absorption peak. The in-plane electrical conductivity of the undoped film is approximately 4.2$\times$10$^{-6}$ S/cm.

This paper describes the thermally stimulated current (TSC) measurements of arachidic acid and polyamic acid alkylamine salt(PAAS) LB film, which is a precursor of polyimide(PI). The measurements were performed from room temperature to about 25$0^{\circ}C$ and the temperature was increased at a rate of 0.02 K/s linearly. It shows that peaks of TSC are observed at about 8$0^{\circ}C$ in the arachidic acid and about 8$0^{\circ}C$, 16$0^{\circ}C$ in the PAAS LB films. Results of these measurements indicate that one peak at 8$0^{\circ}C$ is resulted from alkyl group; the other peak at 16$0^{\circ}C$ is due to alkyl and C-O group of PAAS. Additional large peak at about 16$0^{\circ}C$ is due to dipole moments in the PAAS films. The DSC and TGA of PAAS, arachidic acid and octadesylamine are measured. Thermal imidization was performed at 30$0^{\circ}C$ far 1 hour by our pre study

In order to investigate the infulence of sodium chloride on the volume resistivity characteristics of transformer oils in temperature range of 20~100[$^{\circ}C$] were made researches. The geometrical capacitance of electrode with coaxial cylindrical shape for measuring the volume resistivity was 16[pF], and hoghmegaohm meter model VMG-1000 was used, the applying voltage were DC 100, 250, 500 and 1000[V]. The classification for the physical properties of specimen by FTIR Spectroscopy was carried out. AS a result of experiment, the value for volume resistivity is increased with sodium chloride contents.

A ternary compound semiconductor $Al_{x}$-Ga/1-x/Sb crystals which have energy gap from 0.7eV to 1.6ev at room temperature with the composition ratio were grown by using the vertical Bridgman method. The characteristics of $Al_{x}$-Ga/1-x/Sb were investigated in this study. The lattice constants of $Al_{x}$-Ga/1-x/Sb crystals with the composition ratio were appeared from 6.096$\AA$ to 6.135$\AA$ with the composition ratio. The electrical properties of the $Al_{x}$-Ga/1-x/Sb crystals measured the Hall effect by van der Pauw method at the magnetic field of 3 kilogauss and at room temperature. The resistivity of Te-doped $Al_{x}$-Ga/1-x/Sb crystals increased from 0.771 $\Omega$-cm to 5 $\Omega$-cm at room temperature with increasing the composition ratio. The mobility of Te-doped $Al_{x}$-Ga/1-x/Sb crystals varied with the composition ratio x, within the following three different regions, such as GaSb-like (0$\leq$x$\leq$0.3), intermediate (0.3$\leq$x$\leq$0.4) and AlSb-like (0.4$\leq$x$\leq$1).eq$1).

In this paper. we deal wish the I-t characteristic of law voltage distribution fuse. It is used to be thermal characteristic in being produced at fuse element part. The elements are divided low temperature melting element(LTME) by high temperature melting element(HTME). Those parts make of coordination. The characteristic of fuse is decided by material and design etc. used at element. We analysis I-t characteristic curve by using the numerical method. And we compared the curve of simulation with that of experiment

A composite films were prepared by using Polyphenylenediamine(PPD) synthesized in our lab. and crystalline V$_2$O$_{5}$ in various mixture ratio for using positive active material of polymer film battery. The thermal stability of prepared composite film was carried out by using TGA. Electrical conductivity of composite film were also measured by using four-probe method in dry box. The thermal stability of prepared composite film is more than 35$0^{\circ}C$. The electrical conductivity of composite film increased and showed the highest value(about 23 S/cm) when doped at 0.4% LiCiO$_4$solution.n.

We synthesized amphiphilic material including dye skeleton, p-phenylenediamine(PD) by attaching norma-decyl group of two strands at a part of coordinating atom, for obtaining reasonable design of LB uniform films. The synthesis of this compounds was quantitatively carried out under ultra pure state. This product was identified with FT-lR spectroscopy, UV absortion spectroscopy, and $^1$H-NMR spectroscopy, respectively. When manufacturing monolayer, we confirmed molecular area from pressure-area($\pi$-A) cutie of thiscompound onto the surface of the water. The spectroscopic approach also has done by UV absortion spectroscopy. It was shown that PD-complex LBfilms were deposited well with monolayer thickness. The conductivity based on I-V characteristics of PD-complex LB films were in the range of 10$^{-10}$ S/cm at room temperture. The microscopic properties by AFM, showed the good orientation of various monolayer or multilayer molecules

In this study, in order to develop outdoor insulating materials, SIN(simultaneous interpenetrating polymer network) was introduced to Epoxy resin and the environment resistance was investigated. The single network structure specimen(E series) formed of Epoxy resin alone and simultaneous interpenetrating polymer network specimen (EM series) in which epoxy resin was taken as the first network and methyl methacrylate resin as the second network were manufactured. Ten kinds of specimens were manufacture by filler (SiO$_2$) content. SEM were utilized in order to confirm their network structure changes, and AC voltage dielectric strength was measured. Also, UV-test and tracking test were carried out investigate the environment resistance characteristic. Therefore the variations of network structure were happened as a result of SEM test, and it was confirmed that simultaneous interpenetrating polymer network specimens were more excellent than single network structure specimens.

In this paper, We intended to evaluate characteristics of XLPE/EPDM interface which exists in the cable joint. Because the fault was mainly occurred in this interface. We investigated breakdown characteristics of XLPE/EPDM double layered insulator as a funtion of temperature, pressure, annealing time, kinds of jointmaterial. It was shown that breakdown strength of XLPE/EPDM insulators is higher that of XLPE/XLPE or EPDM/EPDM

The amorphous chalogenide semiconductors are new material in semiconductor physics. Their properties, especially electronic and optical properties are main motives for device application. Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$material has the stable ac conductivity at high frequency and the dc memory switching property. At higher frequency than 10MHz, ac conductivity of As$_{10}$Ge$_{15}$ Te$_{75}$ thin film is much higher than below frequency and independent of temperature and frequency. If the dc voltages are applied between edges of thin film, one can see the dc memory switching phenomenon, in other words the dc conductivity increases quite a few of magnitude after the threshold voltage is applied. Using the stable ac conductivity at high frequency and the increase of conductivity after dc memory switching, As$_{10}$Ge$_{15}$ Te$_{75}$thin film is considered as new material for microwave switch devices.vices.es.vices.

In this paper, we investigated the electrical characteristics which is d.c. and a.c. conductivity of the amorphous Te$_{80}$Se$_{10}$Sb$_{10}$thin film prepared by thermal evaporation. As the results, the d.c. conduction mechanism was followed thermally activated conduction and from the data of d.c. conductivity, the acti-vation energy and mobility gap were obtained. the d.c. conductivity was increased with temperature and a.c. conductivity also was increased with temperature and frequency. It can consider that the annealing is indispensable for higher conductivity since the activation energy decreased but d.c. and a.c. conductivity increased with annealing.aling.

The effects of $Co_{67}$C $r_{33}$ underlayer on the crystallographec and magnetic characteristics of the Co-Cr-Ta layer deposited on the underlayer was investigated. The diffraction intensity $I_{p(002)}$ of Co-Cr-Ta layers on the $Co_{67}$C $r_{33}$ layer was stronger than that of single layer and Co-Cr-Ta/Ti double layer. Therefore, the crystallinity of Co-Cr-Ta layer was improved by the $Co_{67}$C $r_{33}$ underlayers rather than Ti ones. However, the coercivity $H_{c}$ of Co-Cr-Ta layers deposited on $Co_{67}$C $r_{33}$ underlayer was as low as 250 Oe even at substrate temperature of 22$0^{\circ}C$. This $H_{c}$ decrease seems to be attributed to the effect of the $Co_{67}$C $r_{33}$ underlayer as well as interval time between deposition of the underlayer and the Co-Cr-Ta layer.yer.layer.yer.

In this study, piezoelectric transducers were designed and manufactured using PZT-5A which had relatively high electromechanical coefficient, NDT system was developed with was able to inspect automatically using stepping motors, PC-Lab, and PC-Scope The optimum design conditions for NDT were presented and verified comparing PZT-5A probes with comercial probes. It was proved with comercial probes. It was proved by simulation and experiments that Epoxy is good as material of matching and backing layers. The envelope was reduced 60% with matching layer and 76% with matching and backing layer. NDT was successfully carried out for aluminum test pieces. Distance error of PZT-5A probe was 2.8%.

Ag coating on the textured YBCO and PTFE coating on the sintering YBCO were prepared. The critical current densities of different YBCO samples with and without coatings were compared. Both of Ag coating and PTFE coating can well protect YBCO from moisture and $CO_2$.

Cl-based gas chemistry is generally used to etching for Al alloy metallization. After the etching of Al alloy with Cl-based gas plasma, residual chlorine on Al alloy reacts with $H_2O$ due to air exposure and results in Al corrosion. In this study, the corrosion Phenomena of Al were examined with XPS(X-ray photoelectron spectroscopy) and SEF(Scanning electron microscopy). It was confirmed that chlorine mainly existed at the grain boundary of Al alloy after plasma etching of Al alloy with Cl-based gas chemistry and Al corrosion was largely generated at the grain boundary of Al a1loy. And residual chlorine was passivated by sulfur and fluorine which were generated by SF$_{6}$ plasma. These effects of passivation reduced the Al corrosion due to air exposure.e.

$(Sr_{1-x}{\cdot}Ca_x)TiO_3+yNb_2O_5$($0.05{\leq}x{\leq}0.2$, 0.004$1350[^{\circ}C]$ in a reducing atmosphere($N_2$ gas). Dielectric propertries were investigated with contents of $Nb_2O_5$. The grain size and dielectric constant increase with increase $Nb_2O_5$, but decrease in $Nb_2O_5$ exceed($Nb_2O_5=0.6[mol%]$). Also, the temperature characteristics of the dielectric loss factor exhibited a stable value within 0.5[%]. The capacitance characteristics appeals a stab]e value in ${\pm}10[%]$.

In this study, the dieiectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability . As a result. first of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature, and the breakdown strength of specimens because it is believed that the adding filler farms interface and charge is accumulated in it, therefore the molecular motility is raised, the electric field is concentrated, and the acceleration of electron and the growth of electron avalanche are early accomplished. In the case of filled specimens with treating silane, the breakdown strength become much higher since the suggests that silane coupling agent improves interfacial combination and relays electric field concentration. Finally, from the analysis 7f weibull distribution. it was confirmed that as the allowed breakdown probability was given by 0.11[%].

In this paper, electric field interference was analyzed in the Printed Circuit Board to restrain the elcctromagnetic wave using Boundary Element Method and Finite Element Method. First, charge density distribution was simulated using Boundary Element Method and the characteristic impedance was caculated to restrain the reflex wave, and mutual capacitance was caculated in the multi-strip line PCB. Finally, electric field was simulated in the variable patterns using Finite Element Method. As a result, the optimal structure and characteristics of strip line was obtained and the imformations about the optimal design pattern could be obtained with the analysing the feild distribution.

This paper describes a type of piezoelectric transformer with improved design principles. It consists of a thin rectangular piezoelectric ceramic plate having two input electrodes and one output electrode. The length of each input and output electrode is nearly one third of that of piezoelectric transformer itself. In the driving section, the ceramic plate is poled in the thickness direction reversely with each other, and has electrodes on both main faces. The electric input near its fundamental resonance frequency is applied to the driving section in parallel and the output voltage from the generating section is connected to the resistor load. Its equivalent circuit is derived from the Mason\`s model. The frequency characteristics near the resonance frequency under no load have been investigated. Moreover, using this piezoelectric transformer we measured the LCD backlight characteristics.

This paper describes the realization of the full-color to the degree of nearest white light by compounding high brightness Red, Green and Blue LEDs with appropriate proportional index. Once these three colors; red, green and blue are mixed, they are genearlly additive mixing and produce white light color contrasted to negative mixing. The luminous efficiency is defined as the product of the efficiency(lm/w), which indicates the degree of perceptual response by the human eye to unit energy(W) of light emitted by an active display devises and as the conversion efficiency of the device from electric power consumed to optical energy produced. We will deduce the each number of LEDs theoretically and design several shapes of LED displays for the full-color. Finally theoretical predictions will be compared with the measured data with different type of display designs.

Electrical properties of acrylic acid and n-butyl acrylate grafted polyethylene were investicated. Charge accumulation characterist-ics of acrylic acid grafted PE are changed by graft ratio, but it remains not changed in n-butyl acrylate grafted PE. It was also observed that anti-treeing and AC breakdown strength of grafted PE were increased due to the graft ratio. The change of electrical properties of grafted PE were attributed to the polar group introduced by the graft reaction.

A signal generated by partial discharge in low density Polyethylene (LDPE) and cross- linked polyethylene (XLPE) has been detected by ultrasonic sensors. The observed signal is analysed with the quantity of partial discharge, number of peaks, and energy ($\Sigma$y$^2$). It was found that signals between LDPE and XLPE are quite different and that the signal of XLPE has very long duration time and rising time, and that the quantity of partial discharge of XLPE is saturated. It was also found that tree retardant XLPE (TR-XLPE) has lower quantity of partial discharge, number of peaks, and energy than naturalal XLPE.

The behaviour of interfacial charge in EPDM/XLPE laminates has been investigated by measuring charge distributions using a pulsed electroacoustic (PEA) method. Homocharge develops in EPDM while heterocharge develops in XLPE. A broadly interfacial charge peak is observed at EPDM/XLPE interface. When EPDM /XLPE laminates are treated in high temperature for different times, the amount and polarity of interfacial charge are changed.

We present the experimental results of high quality factor (Q) inductors fabricated on high-resistivity silicon wafer using standard CMOS process without any modificatons such as thick gold layer or multilayer interconnection. This demonstrates the possibility of building high Q inductors using lower cost technologies, compared with previous results using complicated process. The comparative analysis is carried out to find the optimized inductor shape for the maximum performance by varying the thickness of metal and number of turns with rectangular shape.

In order to investigate the relation between the microstructure and the V-I characteristics of HTSC wire, single and 19 filamentary silver-sheathed Bi2223 tapes were fabricated using the powder-in-tube method. Higher J$\_$c/ at 77.3 K(0 T) and 4.2 K(in magnetic field) can be achieved for the 19 filamentary Bi tape, comparing the single filamentary tape. However, the I$\_$c/ distribution of 19 filamentary Bi2223 tape was found to be wider by analyzing the curve obtained from 2nd differential of V-I data. This was considered to be resulted from worse uniformity of oxide filament due to severe cold working.

Using the AC and DC methods we have studied th electrical properties of ZnO added TiO$_2$. The electrical conductivity of ZnO added TiO$_2$ was nearly unchanged with increasing the content of ZnO. Ac conductivity and conductance as a function of Frequency showed the similar trends. The impedance, admittance, and modulus spectrums were consistent with the results of DC conductivity.

The electrical Properties of ZnO added TiO$_2$were investigated by using the complex impedance measurement and voltage-current source and measurement unit. The electrical conductivity of ZnO added TiO$_2$decrease with increasing the content of ZnO. The frequency-dependent Ac conductivity increase as frequency increase. Also, the trend of capacitances is similar to the AC conductivity. The semicircles of impedance spectrum increase with increasing ZnO contents. The decrease of electrical conductivity seems to be the effect of ZnO acceptor adding.

In this paper a series of developing process for an insulator which can be employed in overhead distribution lines, using polymeric composite materials, is introduced. In order to design an insulator for heavily polluted area, weathershed of alternating type was adopted, which could have longer leakage distance. Modified EVA was used as surface material which has good electrical and mechanical characteristics as well as superior chemical stability. FRP core was covered with above surface material through heat shrinking process. By standardization of each process, higher productivity and lower production cost could be ensured. The developed insulator has been put under various tests including long-term field test and artificial aging test and satisfactory results were obtained.

This Paper is to discribe the ac treeing deterioration in Polyethylenetherphthalate (PET) at various temperature. The AC tree was investigated at 77K using L$N_2$. The experimental results show that V-t characteristics was an inverse proportion to temperature. The progress of tree initiation and growth were also to temperature.

In this study, characteristics of ultrasonic transducer fabricated with porous piezoelectric resonator are investigated, 3-D underwater object recognition using the self-made ultrasonic transducer and SOFM(Self-Organizing Feature Map) neural network are presented. The self-made transducer was satisfied the required condition of ultrasonic transducer in water, and the recognition rates for the training data and the testing data were 100 and 95.3% respectively. The experimental results have shown that the ultrasonic transducer fabricated with porous piezoelectric resonator could be applied for sonar system.

The influences of ZrB$_2$additives to the SiC and pulse width on electrical discharge machining of SiC-ZrB$_2$electroconductive ceramic composites were investigated. IIigher-flexural strength materials show a trend toward smaller crater volumes, leaving a soother surface; the average surface roughness of the SiC-ZrB$_2$15 Vol.% Composite with the flexural strength of 375㎫ was 3.2${\mu}{\textrm}{m}$,whereas the SiC-ZrB$_2$30 Vol.% composite of 457㎫ was 1.35${\mu}{\textrm}{m}$. In the SEM micrographs of the fracture surface of SiC-ZrB$_2$composites, the SiC-ZrB$_2$two phaes are distinct; the white phase is the ZrB$_2$. In the micrograph of the EDM surface, however, these phases are no longer distinct because of thicker recast layer of resolidified-melt-formation droplets present.

In order to synthesize Ba-ferrite fine particles by molten salt method and inhibit the abnormal grain growth of sintered specimen, KCI anti NaCl were added to basic composition to 50% by weight, and added 1 male% of $SiO_2$ to control the shape of Ba-ferrite particles. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substituted with $Co_{2+}$ and $Ti_{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$ $Ti_{x}$ $Co_{x}$ $O_{19}$ , and 1 mole% $SiO_2$ increased the size but shortened c-axis of hexagonal ferrite. Seeds added in Ba-ferrite particle effected inhibition of abnormal grain growth during sintering.ing.g.

In this Paper, the streaming electrification of transformer oils generated at the interface of transformer oils and the AC breakdown with impurity is studied. The electrification current is measured by the electrometer connected the faraday cage. And a oil velocity is maintained equally. In case of the AC breakdown test, the temperature are 30[$^{\circ}C$], 50[$^{\circ}C$], 80[$^{\circ}C$] and 90[$^{\circ}C$], repetitively. As a result of breakdown experiment, the dielectric breakdown strength is decreased in low temperature region and is increased in high temperature region according to increase of contained sodium. In case of streaming electrification experiment, the streaming current is more increased with the specimen contained sodium than the original specimen.

Si anisotropic etching is a key technology for micromachining. The main advantages of tetramethyl ammonium hydroxide (TMAH)-based solution are their full compatibility with IC process. In this work the anisotropic etching of single crystal Si in a TMAH (($CH_3$)$_4$NOH) based solution was studied. The influence of the addition of IPA to TMAH solution on their etching characteristics was also presented. The crystal planes bounding the etch front and their etch rates were determined as a function of temperature, crystal orientation, and etchant concentration. The etch rates of (100) oriented Si crystal planes decreased linearly with increasing the IPA concentration, The etched (100) planes were covered by Pyramidal-shaped hillocks below 15 wt.%, but very smooth surfaces were obtained above 20 wt.%. The addition of IPA to TMAH solution leads to smoother surfaces of sidewalls etched planes.

Anodic bonding is a key technology for micromechanical components. The main advantages of this method can be formed in a batch process, over large areas, and is permanent and irreversible. In this paper, the bonding was performed at temperatures ranging from 300 to 450 $^{\circ}C$, voltages 400 to 1000 V, and times 10 to 30 minutes. The sizes of the Si and the Pyrex #7740 glass were 6 mm $\times$6 mm, respectively. Bonding processes and voids were observed by the optical microscope, and the composition of the anodic bonding interface was analyzed by the SIMS. Optimum condition of the anodic bonding was at temperature above 40$0^{\circ}C$ without regard to voltage.

This paper presents the basic characteristics of thin-film strain gauges using Cr thin-films, in which the Cr thin-films were deposited by DC magnetron sputtering. The optimized deposition conditions as a strain gauge were the input DC power was 7 W/$\textrm{cm}^2$ and the Ar vacuuming pressure was 9 mTorr. The characteristics of fabricated Cr thin-film strain gauge were the gauge factor(GF) was 5.86 in longitudinal strain and -2.04 in transverse one, the TCR was under 400 ppm/$^{\circ}C$ and the TCS was around 0 ppm/$^{\circ}C$.

The MCFC has conspicuous features and high potential in being used as an energy converter of various fuels to electricity and heat. However, the MCFC which use strongly corrosive molten carbonate at 650[$^{\circ}C$] have many problem. Systematic investigation on corrosion behavior of Fe/20Cr/Ti alloys has been done in (62+38)㏖ % (Li+K)CO$_3$ melt at 923K by using steady state polarization and electrochemical impedance spectroscopy method.

When the ideality factor of collector current of AIGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) is larger than unity, conventional $I_{CO}$ / $T^2$ versus 1000/T plot used in the determination of the barrier height of base-emitter junction of HBT was deviated from the straight line. We introduced the effective temperature $T_{eff}$ as nT in the Thermionic-emission equation. The modified $I_{CO}$ /TB versus 1000/ $T_{eff}$ plot was on the straight line in the temperature range considered. The activation energy obtained from the modified plot is 1.61 eV. The conduction band discontinuity calculated using this value was 0.305 eV and this value is coincident with the generally accepted value of 0.3 eV. eV.

Ultra-high-speed analog and digital ICs (integrated circuits) fur 10Gbit/sec optical communication systems have been designed, fabricated and analyzed in this research. These circuits, which are laser diode (LD) driver, pre-amplifier, automatic gain controlled (AGC) amplifier, limiting amplifier and decision circuit, have been implemented with AIGaAs/GaAs heterojunction bipolar transistors (HBTs). The optimized AIGaAs/GaAs HBTs for the 10Gbps circuits in this work showed the cutoff and maximum oscillation frequencies of 65㎓ and 53㎓, respectively. It is demonstrated in this paper that the 10Gbps optical communication system can be realized with the ICs designed and fabricated using AlGaAs/GaAs HBTs.

MgO protection layer in ac PDP(plasma display panel) prevents the dielectric layer from ion bombarding in discharge plasma. The MgO layer also has the additional important role in lowering the firing voltage due to a large secondary electron emission coefficient. Until now, the MgO protection layer is mainly prepared by E-beam evaporation. In this study, MgO protection layer is prepared on dielectric layer of ac PDP cell by reactive R.F magnetron sputtering with Mg target under various conditions of oxygen partial pressure. Discharge characteristics of PDP is also studied as a parameter of MgO preparation conditions. The sputtered MgO shows the better discharge characteristics compared with MgO deposited by E-beam evaporator.

Aging diagnosis system using partial discharge(PD) is being highlighted as a research area. But the application of PD requires complicated analysis method because the PD has complex progressing forms. In this paper, It has been developed to the PD diagnosis system using neural network(NN). As a result after NN learning, the recognized rate was represented about 85%. The safety area is possible to express the second output of NN in this experiments.

카오스 함수인 베이커 함수를 이용하여 불규칙한 상태에 의해 카오스적인 패턴을 발생시키는 패턴 발생기를 구현하였다. 카오스적인 패턴 발생기는 예측할 수 있는 패턴들을 발생시킨다는 점에서 기존의 패턴 발생기와 흡사하지만, 패턴요소의 출력 순서는 결정론적 카오스 함수에 따른다.

We prepared LiMn$_2$O$_4$ by reacting stoichiometric mixture of LiOH.$H_2O$ and MnO$_2$ (mole ratio 1 : 1) and heating at 80$0^{\circ}C$ for 24h, 36h, 48h, 60h and 70h. We obtained through X-ray diffraction that lattice parameter varied as function of heat treatment time. heated cathode active materials at 80$0^{\circ}C$ for 36h, (111)/(311) peak ratio was 0.37. It expected good charge/discharge characteristics. When (111)/(311) peak ratio was 0.37, it will be that crystal structure is farmed very well. In the result of charge/discharge test When heated at 80$0^{\circ}C$ for 36h, charge/discharge characteristic of LiMn$_2$O$_4$is the most property. It agree with our expectation.

Carbon materials have become a major interestings of research directed toward the development for anode of lithium batteries of enhanced cell capacity. The purpose of this study is to research and develop poly(p-phenylene)(PPP)-based carbon as a anode of lithium secondary batteries. We have synthesized PPP from benzen by chemical reaction. And then disordered carbon materials were obtained by heat-treating PPP in a nitrogen atmosphere at 40$0^{\circ}C$ to 100$0^{\circ}C$ for 1 hour. The carbon prepared by heat treatment showed a broad x-ray diffraction peak around 2$\theta$=23$^{\circ}$. Electrodes were charged and discharged at a current density of 0.1㎃/$\textrm{cm}^2$. Excellent reversible capacity of 275㎃h/g and 97% of charge/discharge efficiency were observed heat treated PPP-based carbon a $700^{\circ}C$.

This study is to research Li$_{x}$Ni$_{2-x}$O$_2$ cathode for lithium chargeable battery. We investigated morphology and cell resistance, capacity and Ah efficiency of Li$_{x}$Ni$_{2-x}$O$_2$/Li cells using Li$_{x}$Ni$_{2-x}$O$_2$ prepared under air and $O_2$ flow. The (003)I/(104)I intensity ratio was 1.4. The cell resistance was increased with increasing Li in Li$_{x}$Ni$_{2-x}$O$_2$. The discharge capacity based on Li$_{x}$Ni$_{2-x}$O$_2$of 1st and 15th cycles was 135㎃h/g and 108㎃h/g, respectively. The Li$_{x}$Ni$_{2-x}$O$_2$ prepared with hexan under $O_2$ flow had a good properties. properties. properties.

디지탈 신호처리에 혼돈 신호를 적용하기 위해 선형 확산 결함(coupled linear diffusion)을 이용하여, 궤도 (trajectory)의 혼돈적인 고유특성은 변함이 없고 주파수 만 체배관계에 있는 4가지 혼돈 신호들을 발생시켰다. 혼돈 신호들을 발생시키기 위한 기본 혼돈 회로로는 Chua 회로를 사용하였고, 이 혼돈 신호들을 복극 4레벨 방식에 응용하였다.

Low dielectric constant fluorinated oxide (SiOF) films were deposited using SiF$_4$/O$_2$/SiH$_4$mixtures by electron cyclotron resonance chemical vapor deposition (ECR CVD). Chemical composition of SiOF films was investigated by Fourier transform infrared spectroscopy (FT-lR). The fluorine content in the SiOF film observed by X-ray photoelectron spectroscopy (XPS). The dielectric constant decreased with increasing of the SiF$_4$ flow rate about 8sccm. The SiOF film, deposited with SiF$_4$=8 sccm, exhibited a F content of 5 atomic % and a relative dielectric constant 3.45. For evaluating SiOF films stability, humidity tests were performed.

The recent development of high temperature superconducting epitaxial thin film offer great potential for planar passive microwave application such as ring resonator, filters, transmission lines, and antennas. This paper describes the fundamental properties of Microstrip Band-Pass Filter using HTS Thin Film and its application to microwave devices. In order to fabricate HTS microstrip multiple filters, We have grown laser ablated HTS thin films, patterned by photolithographic process and wet etching processes intro HTS microwave devices.

The electrical characteristics of stearic acid LB films far the horizontal direction were investigated to develop the gab sensor using LB films. $\pi$ -A isotherm was measured to transfer stearic acid on slide glass substrate and surface pressure for optimal deposition was 25[dyne/cm]. The deposition status of stearic acid LB films was verified by the measurement of capacitance which was increased with the number of layers. The thickness of electrode was estimated about 1000 by the I-V characteristics far the horizontal direction. The Conductivity of stearic acid LB films for horizontal direction was 10$^{-8}$ [S/cm] that mean like semiconductor.

We investigated electric and dielectric properties of MIM device using Maleate Copolymer LB films. The thickness of maleate copolymer LB film by ellipsometry measurements and X-ray diffraction pattern was about 27~30[ ]. The maleate copolymer 13 film have the property of insulator like organic ultra-thin film. The electric conduction was Schottky current measured by I-V characteristics, and the conductivity was 10$^{-15}$ ~10$^{-14}$ [S/cm]. Dielectric constant was about 5.0~6.0 by various measurement: I-V, frequency-depenent dielectric properties. Schottky barrier was about 0.9 ~1.0(eV). By relation between log I and 1/T, activation energy baa 0.74(eV). Frequency-depenent dielectric properties wart orientational polarization by the dipole.

Optical absorption were performed on LB films of binary mixtures of three kinds of merocyanine dyes [DO], [DS], and [6Me-DS], where [DS] and [6Me-DS] from J-like aggregates but not [DO] in single component films. The observed optical absorption spectra of mixed films were markedly dependent on the combination of dyes. [DS]$_{1-x}$ [DO]$_{x}$ LB films show a sharp red shift J-like band peak in the while concentration range. We found the formation of J-aggregates in a mixed merocyanine dyes containing a non J-aggregate forming dye [DO], in a single component case. Further investigations on the present and other mixed dye films will be needed to clarify these points.ts.

The rheological changes in sensitive materials was investigated by using QCA. Langmuir-Blodgett method was used to transfer sensitive material to the quartz crystals because of its facility to control the thickness. To develop gas sensor using quartz crystal, the rheological change of sensitive LB films were observed using the resonant resistance concept. And the rheological changes as to adsorption of organic vapours were used to analyze the response mechanism between organic vapours and sensitive LB films. We considered with resonant frequency of quartz crystal to obtain one-channel gas sensor and analytical tools of organic vapours response. In our results, we analyzed the organic vapours response by the rheological changes and mass loading as to adsorption of organic vapours.

In this paper, the response characteristics of organic gases were investigated by using quartz crystal microbalance(Q.C.M) with different polymeric sensitive materials. The new linear parameter was discussed in order to develope gas sensing system using neural network and pattern recognition. We analyzed the response characteristics by the area of resonant frequency shift of quartz crystal, which mean affinities of organic gases for polymeric sensitive firm. The experimental results shows that the parameter made by the area of frequency shift which was linear with injection amount of organic gases has possibility to be used for pattern recognition and neural network. And they have different normalized pattern.

The ceramic dielectrics were fabricated by mixing of Mn $O_2$ and ZnO at (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_3$ and studied for dielectric relaxation characteristics. The dielectric relaxation time was increased by space charge polarization of palaelectric layer at the low temperature and frequency but it was decreased by Interface polarization at the high temperature and frequency. The remnant polarization and coercive field of ceramic dielectrics was decreased by rising temperature.ure.

We have investigated air/200ppm NO$_2$ gas-detector characteristics of using CuTBP (Copper-tetra-tert-butylphthalocyanine) chemiresistor devices. The CuTBP films were made by Langmuir-Blodgett (LB) techniques. Sensitivity, response time, recovery time, and repoducibility of the devices were measured by current-voltage characteristics. To increase sensitivity, interdigital electrode was used. It was found that a conductance G increases monotonically as the number of interdigital electrode increases, and a Sensitivity, Reproducibility is stable. As far as a current is concerned, the current when N=25 is greater than that when N=1 by 70 or so. It indicates that the number of interdigital electrodes affects the current, sensitivity and stability We have also investigated applicability of the CuTBP chemiresistor device for a gas detector.

Effects of humidity absorbing deterioration on AC dielectric breakdown characteristics of modified epoxy resin system with SN(succinonitrile) were investigated. As the forced humidity absorbing deterioration proceeded under high temperature and humidify, glass transition temperature increased. The dielectric breakdown strength increased and then decreased at deterioration cycles higher than 2. Not only, the increment of thermal stability but also, the physical detects such as Internal cracks and voids occurred during the humidity absorbing deterioration cycle were the main causes of the change in dielectric properties.

Treeing deterioration which is one of the main cause of breakdown in insulating materials is affected by temperature, applied voltage and frequency. In this study, GN was introduced to improve impact strength of DGEBA/MDA system and the temperature dependence of AC treeing deterioration in this system was investigated. Dielectric breakdown strength decreased with the increment of temperature. As temperature increased, the growth rate of tree Increased.