• Proceedings of the KIEE Conference
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• 2003.07d
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• pp.2522-2524
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• 2003

본 논문은 다수의 가우시안(Gaussian) 함수를 가중치 함수로 이용하여 퍼지 소속 함수의 효율적인 동정기법을 제안한다. 먼저 데이터를 가장 잘 구분하는 특징 변수를 선정하고, 이에 대한 기본 소속 함수를 가우시안 함수로 설정한 후, 다수의 가우시안 함수를 곱하여 소속 함수를 동정한다. 해당 특징 변수에 대한 소속 함수의 동정 후, 다음 우선 순위의 특징 변수를 퍼지 규칙에 첨가하여 가장 높은 정확도를 획득할 때까지 반복적으로 소속 함수를 동정한다. 이러한 방법은 데이터의 분포 성향을 소속 함수에 반영시킬 수 있을 뿐만아니라, 알고리듬의 고속 연산도 가능하다. 제안한 방법의 성능을 검증하기 위해 iris 데이터에 적용하여 모의실험의 예를 보인다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.1
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• pp.123-128
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• 2014

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.5
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• pp.1249-1254
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• 2008

The crucial part of graphical model is to compute the posterior distribution of parameters plus with the hidden variables given the observed data. In this paper, implementation of variational Bayes method for Gaussian mixture model and derivation of factorial variational approximation have been proposed. This result can be used for data analysis tasks like information retrieval or data visualization.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.87-90
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• 2011

본 논문에서는 유전자 알고리즘에 SOM 알고리즘을 적용하여 효율적으로 경로를 탐색할 수 있는 방법을 제안한다. 제안된 경로 탐색 방법은 효율적인 경로 탐색에 앞서 유전자 알고리즘에 의해 도출된 각각의 결과 좌표를 뉴런으로 설정하고 각 뉴런들의 모든 거리 값을 SOM 알고리즘에 적용하여 거리에 대한 가중치를 구한다. 뉴런 선택 조건(가장 적은 거리 가중치, 이전에 선택되지 않았던 뉴런)을 만족하는 뉴런 및 해당 뉴런의 이웃 반경 내에 존재하는 뉴런들의 연결 강도를 가우시안 분포(오차율 분포)에 적용하여 변경하고, 가장 강한 연결 강도를 가지는 승자 뉴런에 해당하는 경로를 선택한다. 이러한 과정을 뉴런의 개수만큼 반복하여 모든 뉴런들의 경로를 도출한다. 제안된 방법을 실험한 결과, 기존의 유전자 알고리즘을 이용한 방법보다 제안된 방법이 효율적인 경로를 탐색하는 것을 확인할 수 있었다.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2082-2084
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• 2005

I-V 특성 곡선의 2차 미분을 통해서 얻어지는 전자 에너지 분포 함수를 정확하게 구하기 위해서는 스무딩 과정이 반드시 필요하다. 대표적인 스무딩 방법으로 가우시안 확률 밀도 함수를 instrument함수로 이용하는 가우시안 스무딩이 있다. 본 연구에서는 시스템에 따라서 instrument함수가 다르다는 점에 착안하여, 여러 가지 다른 종류의 확률 밀도 함수를 instrument함수로 사용 스무딩에 적용하여 확률 밀도 함수에 따른 노이즈 제거 및 전자 에너지 분포 함수의 정확도를 비교하였고. 동시에 대표적인 범용 스무딩 방법인 사비츠키-골래이 스무딩, Polynomial fitting과도 그 결과를 비교 분석하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.2
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• pp.325-330
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel structure and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model. Resultly, DIBL has been greatly changed for channel structure and doping concentration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.878-881
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• 2011

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel thickness and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.42 no.6
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• pp.167-176
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• 2005

This paper describes how the state tying model based on the decision tree which is one of Acoustic models used for speech recognition optimizes the model by reducing the number of mixture Gaussians of the output probability distribution. The state tying modeling uses a finite set of questions which is possible to include the phonological knowledge and the likelihood based decision criteria. And the recognition rate can be improved by increasing the number of mixture Gaussians of the output probability distribution. In this paper, we'll reduce the number of mixture Gaussians at the highest point of recognition rate by clustering the Gaussians. Bhattacharyya and Euclidean method will be used for the distance measure needed when clustering. And after calculating the mean and variance between the pair of lowest distance, the new Gaussians are created. The parameters for the new Gaussians are derived from the parameters of the Gaussians from which it is born. Experiments have been performed using the STOCKNAME (1,680) databases. And the test results show that the proposed method using Bhattacharyya distance measure maintains their recognition rate at $97.2\%$ and reduces the ratio of the number of mixture Gaussians by $1.0\%$. And the method using Euclidean distance measure shows that it maintains the recognition rate at $96.9\%$ and reduces the ratio of the number of mixture Gaussians by $1.0\%$. Then the methods can optimize the state tying model.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.683-685
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• 2012

This paper have presented the analysis of the change for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET with two gates to be next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold chatacteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering is changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.1
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• pp.145-150
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• 2013

This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.