• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.365-371
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• 2003

We prepared silicon on insulator(SOI) wafer pairs of Si/1800${\AA}$ -SiO$_2$ ∥ 1800${\AA}$ -SiO$_2$/Si using water direct bonding method. Wafer pairs bonded at room-temperature were annealed by a normal furnace system or a fast linear annealing(FLA) equipment, and the micro-structure of bonding interfaces for each annealing method was investigated. Upper wafer of bonded pairs was polished to be 50 $\mu\textrm{m}$ by chemical mechanical polishing(CMP) process to confirm the real application. Defects and bonding area of bonded water pairs were observed by optical images. Electrical and mechanical properties were characterized by measuring leakage current for sweeping to 120 V, and by observing the change of wafer curvature with annealing process, respectively. FLA process was superior to normal furnace process in aspects of bonding area, I-V property, and stress generation.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.104-107
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• 2005

Recently, according to the development of semiconductor industry, needed to high-integration and high-functionality. These changes are required for silicon wafer of large scale diameter and precision of TTV (Total Thickness variation). So, in this research, suggest that the method of monitoring system is using motor current. This method is needed for observation of silicon wafer grinding process. Motor current sensor is consisted of hall sensor. Hall sensor is known to catching of change of current. Received original signal is converted to the diginal, then, it is calculated RMS values, and then, it is analysed in computer. Generally, the change of force is relative to the change of current, So this reason, in this research tried to monitoring of motor current change, and then, it will be applied to analysis for silicon wafer grinding process. using motor current sensor.

• Laser Solutions
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• v.6 no.3
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• pp.29-35
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• 2003

In semiconductor processing, there are two types of particle contaminated onto the wafer, i.e. dry and wet state particles. In order to evaluate the cleaning performance of laser shock wave cleaning method, the removal of 1 m sized alumina particle at different particle conditions from silicon wafer has been carried out by laser-induced shock waves. It was found that the removal efficiency by laser shock cleaning was strongly dependent on the particle condition, i.e. the removal efficiency of dry alumina particle from silicon wafer was around 97％ while the efficiencies of wet alumina particle in DI water and IPA are 35％ and 55％ respectively. From the analysis of adhesion forces between the particle and the silicon substrate, the adhesion force of the wet particle where capillary force is dominant is much larger than that of the dry particle where Van der Waals force is dominant. As a result, it is seen that the particle in wet condition is much more difficult to remove from silicon wafer than the particle in dry condition by using physical cleaning method such as laser shock cleaning.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.215-215
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• 2012

Sillicon Wafer는 순도 99.9999999%의 단결정 규소를 사용하여 만들어진다. 웨이퍼의 표면은 결함이나 오염이 없어야 하고 회로의 정밀도에 영향을 미치기 때문에 고도의 평탄도와 정밀도를 요구한다. 특히 실리콘의 순도는 효율성에 영향을 주는 주요 원인으로 금속의 오염은 실리콘 웨이퍼의 수명을 단축시켜 효율성을 떨어뜨린다. 표면에 흡착된 구리와 니켈은 Silicon 오염의 주요인 중 하나로 알려져 있다. 이 연구는 Silicon Wafer 표면에 흡착된 구리가 내부로 확산되는 메커니즘을 규명하는 것을 목표로 한다. 표면에 구리가 흡착된 상태는 AES 및 LEED로 관찰하였다. 표면에 흡착된 구리의 표면(수평)및 내부(수직)확산은 SIMS를 이용하여 연구하였다.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.68-71
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• 2000

In this paper, we have measured the oxygen contents by FTIR in silicon wafer various process technology(slicing, lapping, polishing). The measured data are also compared with the data of etching process(KOH, Bright etching). Also we have measured the surface morpology in backside silicon wafer after etching treatment and etch pit density due to OISF after 4 step high temperature annealing process with optical microscope.

• Tribology and Lubricants
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• v.18 no.4
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• pp.260-266
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• 2002

In this study, the effects of oxide layer farmed on the wear tracks of TiN coated silicon wafer on friction and wear characteristics were investigated. Silicon wafer was used for the substrate of coated disk specimens, which were prepared by depositing TiN coating with 1 ${\mu}{\textrm}{m}$ in coating thickness. AISI 52100 steel ball was used fur the counterpart. The tests were performed both in air for forming oxide layer on the wear track and in nitrogen to avoid oxidation. This paper reports characterization of the oxide layer effects on friction and wear characteristics using X-ray diffraction(XRD), Auger electron spectroscopy(AES), scanning electron microscopy (SEM) and multi-mode atomic force microscope(AFM).

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.167-168
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• 2002

In this study, the effects of oxide layer formed on the wear tracks of TiN coated silicon wafer on friction characteristics were investigated. Silicon wafer was used for the substrate of coated disk specimens, which were prepared by depositing TiN coating with $1\;{\mu}m$ in coating thickness. AISI 52100 steel balls were used for the counterpart. The tests were performed both in air for forming oxide layer on the wear track and in nitrogen to avoid oxidation. This paper reports characterization of the oxide layer effects on friction characteristics using X-ray diffraction (XRD). scanning electron microscopy (SEM) and friction force microscope (FFM).

• Macromolecular Research
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• v.11 no.6
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• pp.511-513
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• 2003

Hydroxyl groups were introduced onto the surface of a silicon wafer by O$_2$ plasma treatment. Poly(l-lactide) (1-PLA) was attached onto the surface-modified silicon wafer by the ring-opening polymerization of l-lactide using the hydroxyl group as an initiator. Lamellar single crystals of 1-PLA were grown directly on the 1-PLA-attached silicon wafer from a 0.025% solution in acetonitrile at 5$^{\circ}C$. A well-separated, lozenge-shaped, monolayered lamellar single crystal was prepared because the 1-PLA-attached silicon wafer acts as an initial nucleus.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.5
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• pp.606-613
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• 2011

In this paper, patterns of laser scattering and detection of micro defects have been investigated based on Rayleigh criterion for silicon wafer in solar cell. Also, a new laser scattering mechanism is designed using characteristics of light scattering against silicon wafer surfaces. Its parameters are to be optimally selected to obtain effective and featured patterns of laser scattering. The optimal parametric ranges of laser scattering are determined using the mean intensity of laser scattering. Scattering patterns of micro defects are investigated at the extracted parameter region. Among a lot of pattern features, both maximum connected area and number of connected component in patterns of laser scattering are regarded as the important information for detecting micro defects. Their usefulness is verified in the experiment.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.6
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• pp.139-144
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• 2014

As a result of a mismatch of the residual stress between both sides of the silicon wafer, which warps and distorts during the patterning process. The accuracy of the warpage measurement is related to the calibration. A CCD camera was used for the calibration. Performing optimization of the error function constructed with phase values measured at each pixel on the CCD camera, the coordinates of each light source can be precisely determined. Measurement results after calibration was performed to determine the warpage of the silicon wafer demonstrate that the maximum discrepancy is $5.6{\mu}m$ with a standard deviation of $1.5{\mu}m$ in comparison with the test results obtained by using a Form TalySurf instrument.