JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Subthreshold Swing Model for Symmetric Double-Gate (DG) MOSFETs with Vertical Gaussian Doping

  • Tiwari, Pramod Kumar (Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Institute of Technology, Banaras Hindu University) ;
  • Jit, S. (Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Institute of Technology, Banaras Hindu University)
  • Received : 2009.11.22
  • Published : 2010.06.30
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Abstract

An analytical subthreshold swing model is presented for symmetric double-gate (DG) MOSFETs with Gaussian doping profile in vertical direction. The model is based on the effective conduction path effect (ECPE) concept of uniformly doped symmetric DG MOSFETs. The effect of channel doping on the subthreshold swing characteristics for non-uniformly doped device has been investigated. The model also includes the effect of various device parameters on the subthreshold swing characteristics of DG MOSFETs. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained by using the commercially available $ATLAS^{TM}$ device simulator. The model is believed to provide a better physical insight and understanding of DG MOSFET devices operating in the subthreshold regime.

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References

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