In order to drive the high-density plasma displays, a high-speed driving technology must be researched. In this experiment, the relationship between the width of the address electrode and high-speed driving is analyzed using the Vt close curve and the panel structure for high-speed driving is proposed. In addition we show that the wider the width of the address electrode is, the narrower the width of the scan pulse becomes. Therefore, we could achieve the minimum data voltage of 50.1V at a scan pulse width of $1.0/{\mu}s$ and a ramp voltage of 210V at an address electrode width of $180/{\mu}m$ for the high-speed driving 4-inch test PDP.

This paper presents an assessment method in integrity of the windings in cast resin molded transformers by using vertical analysis of thermal distribution. The proposed method is to compare the temperature distribution in a sound specimen with that in the faulted specimen with a layer to layer short circuit. Temperature distribution was acquired by an infrared thermography system, and the Arrhenius equation was adopted to the accelerated test. The proposed method can be used to detect the failures in the transformers.

A semi-empirical method to determine the electrostatic characteristics of a diode type corona aerosol charger based on ion current measurement and electrostatic charging theory was presented. Results from mathematical model were in agreement with those from experimental investigation of the charger. Current-voltage characteristics, $N_{i}t$ product and charge distribution against aerosol size were obtained. It was shown that the space charge was significant and must be taken into account at high ion number concentration and low flow rate. Additionally, significant particle loss was evident for particles smaller than 20 nm in diameter where their electrical mobility was high. Increase in charging efficiency may be achieved by introducing surrounding sheath flow and applying AC high voltage. Overall, the approach was found to be useful in characterizing the aerosol charger.

Alternating current (AC) losses of two Bi-2223 ([Bi, Pb]: Sr: Ca: Cu: O = 2:2:2:3) tapes [(Tape I, un-twist-pitch) and the other with a twist-pitch of 10 mm (Tape II)] were measured and compared. These samples, produced by the powder-in-(Ag) tube (PIT) method, are multi-filamentary. Also, it's produced by non-twist and different twist pitch (8, 10, 13, 30, 50 and 70 mm). The critical current measurement was carried out under the environment in liquid Nitrogen and in zero-field by 4-probe method. Susceptibility measurements were conducted while cooling in a magnetic field. Flux loss measurements were conducted as a function of ramping rate, frequency and field direction. The AC flux loss increases as the twist-pitch of the tapes decreased, in agreement with the Norris Equation. Neutron-diffraction measurements have been carried out investigate the crystal structure, magnetic structures, and magnetic phase transitions in Bi-2223([Bi, Pb]:Sr:Ca:Cu:O)

[$SiO_2$] film coated as a passivation layer for YBCO based electronic devices is investigated by measuring the micro wave properties of micro strip line resonators. The $SiO_2$ film coated resonators are compared with coated resonators for two degradation conditions, a $200^{\circ}C$ annealing in air and an exposure to air at $85^{\circ}C\;85\%$ relative humidity. The $SiO_2$ film reduces the YBCO thin film degradation caused by oxygen stoichiometry change and reaction with water.

Photoreflectance (PR) has been measured to investigate the characterization of the $Al_{0.20}Ga_{0.80}As$/GaAs heterostructures. In the PR spectrum, the 'C' peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, binding energy is relatively weak with As evaporation being done to increase Ga. Also obtained is the electric field value according to annealing temperature ($300{\sim}800^{\circ}C$).

We have fabricated a superconducting YBCO system according to the pyrolysis method and low pressure apparatus. In our experiment, the X-ray diffraction pattern of the non doped YBaCuO layer indicated that the superconductor contained only 90K phase crystal. The critical temperature and critical current density for a thick layer at $650^{\circ}C$ were Tc=90 K and $Jc=6{\times}10^{4}A/cm^2$ at 90K. In low pressure apparatus, the 90 K phase YBaCuO was grown at a lower temperature compared with the normal system. Tc and Jc at $650^{\circ}C$ were Tc = 90 K and $Jc=6{\times}10^{4}A/cm^2$ at 90K.