In this work, in order to realize the possible defects at the cable joint interface, four different types of artificial defects are provided : conducting, insulating substances, void and scratches. The analysis related to the PD patterns has been performed by means of conventional Phase Resolved Partial Discharge Analysis (PRPDA) and Chaotic Analysis of Partial Discharge (CAPD) as well which was proposed by our previous communication. As a result, it could be pointed out that each defect has shown particular characteristics in its pattern respectively and that the nature of defect causing partial discharge could be identified more distinctively when the CAPD is combined with the conventional statistic method, PRPDA.

Two-dimensional steady state simulations of planar type radio frequency inductively coupled plasma (RFICP) have been performed. The characteristics of RFICP were investigated in terms of power transfer efficiency, equivalent circuit analysis, spatial distribution of plasma density and electron temperature. Plasma density and electron temperature were determined from the equations of ambipolar diffusion and energy conservation. Joule heating, ionization, excitation and elastic collision loss were included as the source terms of the electron energy equation. The electromagnetic field was calculated from the vector potential formulation of ampere's law. The peak electron temperature decreases from about 4eV to 2eV as pressure increases from 5 mTorr to 100 mTorr. The peak density increases with increasing pressure. Electron temperatures at the center of the chamber are almost independent of input power and electron densities linearly increase with power level. The results agree well with theoretical analysis and experimental results. A single turn, edge feeding antenna configuration shows better density uniformity than a four-turn antenna system at relatively low pressure conditions. The thickness of the dielectric window should be minimized to reduce power loss. The equivalent resistance of the system increases with both power and pressure, which reflects the improvement of power transfer efficiency.

A new Current-Controlled Driving Method that can drive AC PDPs with low voltage and high luminous efficiency for the sustaining period is presented. In this driving method, the voltage source is connected to a storage capacitor and the stored voltage is delivered to the panel through LC resonance. Thus, this driving method can drive the panel with a voltage source as low as about half of the voltage necessary in the conventional driving methods. The discharge current flowing into the AC PDP is limited in this method. Thus, the power consumption for the discharge is reduced and the discharge input power to output luminance efficiency is improved. Experimental results using this driving method showed that we could drive an AC PDP with a voltage source as low as 146V and that high luminous efficiency of 1.33 1m／W can be achieved.

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

In this paper, we first studied the factors affecting the motor current (MC) signal, which was strongly affected by the systematic hardware noises depending on polishing such as pad conditioning and arm oscillation of platen and recipe, head motor. Next, we studied the end point detection (EPD) for the chemical mechanical polishing (CMP) process of shallow trench isolation (STI) with reverse moat structure. The MC signal showed a high amplitude peak in the fore part caused by the reverse meal. pattern. We also found that the EP could not be detected properly and reproducibly due to the pad conditioning effect, especially when conventional low selectivity slurry was used. Even when there was no pad conditioning effect, the EPD method could not be applied, since the measured end points were always the same due to the characteristics of the reverse moat structure with an open nitride layer.

In this paper, we proposed a procedure to analyze a shielded-microstrip step discontinuity using the mode matching method (MMM) combined with the vector finite element method (VFEM), which is used to find the equivalent waveguide-model for a microstrip. In order to calculate the effective-widths and -dielectric permittivity of the equivalent waveguide-model corresponding shielded-microstrip, the propagation constant and characteristic impedance are calculated from the VFEM. MMM is then applied to find the scattering parameter in the planar waveguide. This technique makes it possible to take advantage of the high accuracy of the VFEM as well as the high efficiency of the MMM.

Even though the modulating signal frequency of the light is too high to detect directly, the signal can be extracted by frequency conversion at the same time as the detection by means of the non-linearity of the APD. An analysis is presented for super-high-speed optical demodulation by an APD with electronic mixing. A normalized gain is defined to evaluate the performance of the frequency conversion demodulation. The nonlinear effect of the internal capacitance was included in the small signal circuit analysis. We showed theoretically and experimentally that the normalized gain is dependent on the down converted difference frequency component. In the experiment, the down converted different frequency outputs became larger than the directly detected original signal for the applied local signal of 20㏈m.