The cubic (zinc blende) CdSe eppilayers were grown on GaAs(100) substrates by electron beam (e-beam) evapporation technique. X-ray scans with copper $K\alpha$ radiation indicate that the CdSe eppilayers are zinc blende. The lattice pparameter obtained from the (400) reflection is 6.077$\AA$, which is in excellent agreement with the value repported in the literature for zinc blende CdSe. The orientation of as-grown CdSe eppilayer is determined by electron channeling ppatterns(ECpp). The crystallinity of heteroeppitaxial CdSe layers were investigated based on the double crystal x-ray rocking curve(DCRC). The deppendence of the rocking curve width on layer thickness was studied. The FWHM(full width at half maximum) of CdSe eppilayers grown on GaAs(100) substrates is decreasing with increasing eppilayer thickness. The carrier concentration and mobility of the as-grown eppilayers deduced Hall data by van der ppauw method, are about 7$\times$1017 cm-3 and 2$\times$102 $\textrm{cm}^2$ / sec at room tempperature, resppectively. The energy gapp was determinded from the pphotocurrent sppectrum. In pphotocurrent sppectrum of a 1-${\mu}{\textrm}{m}$-thick CdSe eppilayer at 30K, the ppeak at 1.746 eV is due to the free exciton of cubic CdSe. In summary, We have shown that eppilayers of zinc blende CdSe can be grown on GaAs(100) substrates by e-beam, desppite the large mismatch between eppilayer and substrate, as well as the natural ppreference for CdSe to form in the wurtzite structure.

극소전자 디바이스의 고집적화에 의해 박막배선의 선폭은 0.5$mu extrm{m}$ 이하로 축소되고 있고 상대적으로 높은 전류밀도가 흐르게 된다. 높은 전류밀도하에서는 현재 일반적으로 사용되고 있는 Al을 기본으로 하는 박막배선에서의 electromigration에 의한 결함 발생 그리고 비교적 낮은 전기전도도가 심각한 문제점으로 제기된다. 본 연구에서는 Al과 고전기전도도 물질인 Ag, Cu, 그리고 Au 박막배선에 대해 electromigration에 대한 저항성, 즉 activation energy를 측정 비교함으로써 차세대 극소전자 디바이스를 위한 박막배선재료로서의 가능성을 알아보고자 한다. Electromigration test 및 activation energy를 구하기 위해 순수 Ag, Cu, Al, Au 박막배선을 0.05$\mu\textrm{m}$ 두께, 100$\mu\textrm{m}$ 선폭, 그리고 5000$\mu\textrm{m}$ 길이로 SiO2 열산화막 처리된 pp-Si(100) 기판 위에 진공 증착시켰다. 가속화 실험을 위해 인가된 d.c. 전류밀도는 2$\times$106A/$ extrm{cm}^2$ 이었고, Al과 Au에서는 6$\times$106A/$\textrm{cm}^2$이었다. 실온에서 24$0^{\circ}C$까지의 온도범위에서 d.c.인가후의 저항변화를 측정하여 Median-Time-to-Failure(MTF)를 구한 후 Black 방정식을 이용하여 activation energy를 측정하였다. Activation energy는 Cu가 1.34eV로서 가장 높게 나타났고 Au가 1.01eV, Al이 0.66eV, Ag가 0.29eV의 순으로 측정되었다. 따라서 Cu와 Au 박막배선의 경우 Al보다 electromigration에 대한 저항력이 강한 고활성화에너지 특성을 갖는 고전기전도도 재료로서 차세대 극소전자 디바이스를 위한 대체 박막배선재료로서의 가능성을 보인다.

The adsorpption and decompposition of NO on a stepped ppt(111) surface have been studied using thermal desorpption sppectroscoppy and Auger electron sppectroscoppy. NO adsorbs molecularly in two different states of the terrace and the stepp, which are distinguishable in thermal desorpption sppectra. NO dissociates via a bent sppecies at the stepp sites on the basis of vibrational sppectrum data repported ppreviously. The dissociation of NO is activation pprocess : the activation energy is estimated to be about 2 kcal/mol. Increase in the NO dissociation with adsorpption tempperature is expplained by a pprocess controlled by different of the dissociated atomic nitrogen from the stepp to the terrace of the surface. In addition to No and N2, the desorpption ppeak of N2O is observed. We conclude that the formation of N2O is attributed to surface reaction of No and N adsorbed on the surface.